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參數(shù)資料
| 型號： | MGFS36E2325 |
| 元件分類： | 放大器 |
| 英文描述： | 2300 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE-10 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 65K |
| 代理商： | MGFS36E2325 |
MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.3-2.5GHz HBT HYBRID IC
MITSUBISHI ELECTRIC CORP.
(1/6)
January-2008
DESCRIPTION
MGFS36E2325 is a GaAs RF amplifier designed
for WiMAX CPE.
FEATURES
InGaP HBT Device
6V Operation
27dBm Linear Output Power
33dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit 16dB Step Attenuator
50ohms Matched
Surface Mount Package
RoHS Compliant Package
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
FUNCTIONAL BLOCK DIAGRAM
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
DIM IN mm
Pin
Vc (Vcb)
Vc (Vc1)
Vc (Vc2)
Vc (Vc3)
Pout
Po_det
GND
Vref
Vcont
1
10
1
2
3
4
5
6
7
8
9
10
(X-ray Top View)
2
3
5
4
8
9
6
7
Outline Drawing
36E
2325
(Lot No.)
4.5
1.0
Bias Circuit
Pin
Vcont
(0/3V)
Vcb
1000pF
Vc1
Pout
33kohms
Vref
Po_det
Vc3
1000pF
Vc2
1000pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFS36E2325_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3-2.5GHz HBT HYBRID IC |
| MGFS36E2527 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_07 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_08 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
| MGFS36E2527_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.5-2.7GHz HBT HYBRID IC |
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