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參數(shù)資料
| 型號： | MGFL45V1920A |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-51, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 118K |
| 代理商： | MGFL45V1920A |
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFL45V1920A
1.9 – 2.0 GHz BAND / 32W
DESCRIPTION
The MGFL45V1920A is an internally impedance-matched
GaAs power FET especially designed for use in 1.9 - 2.0
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=32W (TYP.) @f=1.9 - 2.0GHz
High power gain
GLP=13.0dB (TYP.) @f=1.9 - 2.0GHz
High power added efficiency
P.A.E.=45% (TYP.) @f=1.9 - 2.0GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
APPLICATION
item 01 : 1.9 - 2.0 GHz band power amplifier
item 51 : 1.9 - 2.0 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=6.5A RG=25ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain breakdown voltage
-15
V
VGSO
Gate to source breakdown voltage
-15
V
ID
Drain current
22
A
IGR
Reverse gate current
-61
mA
IGF
Forward gate current
76
mA
PT *1
Total power dissipation
100
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
*1 : Tc=25
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=60mA
-
-5
V
P1dB
Output power at 1dB gain compression
44
45
-
dBm
GLP
Linear Power Gain
12
13
-
dB
ID
Drain current
-
7.5
-
A
P.A.E.
Power added efficiency
-
45
-
%
IM3 *2
3rd order IM distortion
VDS=10V,ID(RF off)=6.5A
f=1.9 - 2.0GHz
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
1.5
C/W
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=1.9,2.0GHz,delta f=5MHz
*3 :Channel-case
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Unit : millimeters (inches)
0.6± 0.15
(0.024± 0.006)
1
7
.
4
±
0
.
2
(
0
.
6
8
5
±
0
.
0
8
)
3
.
6
5
±
0
.
4
(
0
.
1
4
±
0
.
0
1
6
)
GF-51
1
.
4
(
0
.
0
5
)
2
.
0
M
I
N
.
(
0
.
0
7
9
M
I
N
.
)
20.4± 0.2(0.803± 0.008)
15.8(0.622)
3
OUTLINE DRAWING
2
.
0
M
I
N
.
(
0
.
0
7
9
M
I
N
.
)
8
.
0
±
0
.
2
(
0
.
3
1
5
±
0
.
0
8
)
24.0± 0.3(0.945±0.012)
1
2
.
4
±
0
.
2
(
0
.
0
9
4
±
0
.
0
8
)
0
.
1
±
0
.
0
5
SOURCE(FLANGE)
1
GATE
2
3
DRAIN
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGFL45V1920A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFL45V1920A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 32W |
| MGFL48L1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 60W GaAs FET |
| MGFL48V1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 60W |
| MGFL48V1920_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 60W |
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