| 型號(hào): | MGFC42V6472A-51 |
| 元件分類: | 功率晶體管 |
| 英文描述: | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 文件頁數(shù): | 1/2頁 |
| 文件大小: | 80K |
| 代理商: | MGFC42V6472A-51 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGFC42V6472A-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC42V6472A | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC42V7177-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC42V7177-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC42V7785A | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC42V7177 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band Internally Matched Power GaAs FET |
| MGFC42V7785A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V7785A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC4419G | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:InGaAs HEMT Chip |
| MGFC44V3436 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET |