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參數(shù)資料
| 型號(hào)： | MGFC41V5964 |
| 廠(chǎng)商： | Mitsubishi Electric Corporation |
| 英文描述： | 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 5.9 - 6.4GHz的波段12瓦內(nèi)部匹配砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | MGFC41V5964 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V5964
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC41V5964 is an internally impedence matched
GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.
OUTLINE DRAWING
Unit: millimeters (inches)
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz
High power gain
GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
APPLICATION
5.9 - 6.4GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10V
ID = 3.4 A
Rg = 50(ohm) Refer to Bias Procedure
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
GF-18
ABSOLUTE MAXIMUM RATINGS
Symbol
V
GDO
V
GSO
I
D
I
GR
I
GF
P
T
Tch
Parameter
Ratings
Unit
Gate to drain voltage
-15
V
Gate to source voltage
-15
V
Drain current
12
A
Reverse gate current
-30
mA
Forward gate current
63
mA
Total power dissipation *1
53.6
W
Channel temperature
175
DegreesC
Tstg
Storage temperature
-65 to +175
DegreesC
*1 : Tc=25 DegreesC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Limits
Typ
-
3
-
Unit
Min
-
-
-
Max
12
-
-5
IDSS
gm
VGS(off) Gate to source cut-off voltage VDS = 3V , ID = 30mA
Output power at 1dB gain
compression
GLP
Linear power gain
Eadd
Power added efficiency
IM3 *2
3rd order IM distortion
Rth(ch-c) Thermal resistance *1
*1 : Channel to case
Saturated drain current
Transconductance
VDS = 3V , VGS = 0V
VDS = 3V , ID = 3.0A
A
S
V
P1dB
40
41
-
dBm
VDS = 10V , ID = 3.4A , f = 5.9 - 6.4 GHz
8.5
-
-42
-
9.5
33
-45
-
-
-
-
dB
%
dBc
C/W
Delta Vf method
2.8
*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz
MITSUBISHI
ELECTRIC
4
1
2
2
0
1
R1.25
2
0.6+/-0.15
(1)
24+/-0.3
20.4+/-0.2
13.4
(3)
8
R1.2
1
(2)
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| MGFC44V3436 | 3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET |
| MGFC44V3642 | 3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET |
| MGFC44V4450 | 4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET |
| MGFC44V5964 | 5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC41V5964_04 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V6472 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V7177 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC42V3436 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V3436_04 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
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