參數(shù)資料
型號： MGFC36V4450A
廠商： Mitsubishi Electric Corporation
英文描述： 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET
中文描述： 4.4?5.0GHz頻段4瓦內部匹配砷化鎵場效應管
文件頁數(shù)： 1/2頁
文件大小： 180K
代理商： MGFC36V4450A
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V4450A
4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC36V4450A is an internally impedance-matched
GaAs power FET especially designed for use in 4.4 ~ 5.0
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=4.4~5.0GHz
High power gain
GLP = 12 dB (TYP.) @ f=4.4~5.0GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 4.4~5.0 GHz band power amplifier
item 51 : 4.4~5.0 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 1.2(A) Refer to Bias Procedure
RG= 100 (ohm)
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Gate to drain voltage
VGSO
Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT
Total power dissipation *1
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25 deg.C
(Ta=25 deg.C)
Ratings
-15
-15
3.75
-10
21
25
175
-65 / +175
Parameter
Unit
V
V
A
mA
mA
W
deg.C
deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25 deg.C)
Limits
Typ.
-
1
-
37
12
-
32
-45
5
Min.
-
-
-
35
9
-
-
-42
-
Max.
3.75
-
-4.5
-
-
1.8
-
-
6
IDSS
gm
VGS(off)
P1dB
GLP
ID
P.A.E.
IM3
Rth(ch-c) Thermal resistance *2
*1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=5GHz, Delta f=10MHz
*2 : Channel to case
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain compression
Linear power gain
Drain current
Power added efficiency
3rd order IM distortion *1
VDS=3V, VGS=0V
VDS=3V, ID=1.1A
VDS=3V, ID=10mA
A
S
V
dBm
dB
A
%
dBc
deg.C/W
VDS=10V, ID(RF off)=1.2A, f=4.4~5.0GHz
Delta Vf method
MITSUBISHI
ELECTRIC
June/2004
Parameter
Test conditions
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to
safety when making your circuit designs, with appropriate
measures such as (1)placement of substitutive, auxiliary
circuits, (2)use of non-flammable material or (3)prevention
against any malfunction or mishap.
Symbol
Unit
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
4
0
GF-8
1
2
(2)
1
2
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0
2
R-1.6
(3)
(2)
1
0.6 +/-0.15
Unit : millimeters
相關PDF資料
PDF描述
MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET
MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET
MH16D64AKQC-10 JT 55C 55#20 PIN PLUG
MH16D64AKQC-75 Circular Connector; No. of Contacts:21; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-21 RoHS Compliant: No
MH16M40AJD-6 FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
MGFC36V4450A_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET
MGFC36V5258 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V5258_04 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
MGFC36V5258_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET
MGFC36V5867 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*