參數(shù)資料
型號: MGF7170AC
廠商: Mitsubishi Electric Corporation
英文描述: UHF BAND GaAs POWER AMPLIFIER
中文描述: 超高頻波段GaAs功率放大器
文件頁數(shù): 2/16頁
文件大小: 316K
代理商: MGF7170AC
MITSUBISHI ELECTRIC
(2/16)
Note : Sampling inspection
ABSOLUTE MAXIMUM RATINGS (Ta=25
deg.C
)
Symbol
Parameter
Ratings
Unit
Vd1,Vd2
Drain supply voltage
6
V
-30 ~ +100
-30 ~ +85
Tc(op)
Tstg
Operating case temperature
Storage temperature
Vg
Gate supply voltage
4
V
Pi
Input power
dBm
15
*1.Each maximum rating is guaranteed independently.
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Ta=25
deg.C
)
*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
Aug. '97
Preliminary
information
Symbol
Pout
Idt
Parameter
Output power
Total drain current
MIN
TYP MAX
Unit
dBm
f
Test conditions
frequency
1715
1780 MHz
3
Limits
Ig
Gate current
mA
520
mA
dBc
-30
2sp
2nd harmonics
rin
input VSWR
Damage
with-standing
Stability
Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=10, All phase
Time=10 sec
Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=3:1, All phase
No damage
No oscillation
Spurious level
-60dBc
Note
Note
28
Vd1=Vd2=3.0V,Vg=2.6V,
Pin=7dBm CDMA modulated signal
based on IS-95 STD.
(1.2288Mbps spreading,OQPSK)
ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
480
450
450
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V
Idle_Id
Idle current
mA
150
50
Vg=2.6V, Po=28dBm
Vg=2.9V, Po=12dBm
10
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