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參數(shù)資料
| 型號： | MGF4851A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEADLESS, CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MGF4851A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4851A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(1/5)
June/2004
DESCRIPTION
The MGF4851A HEMT (High Electron Mobility Transistor) is
designed for use in S to K band amplifiers and oscillators.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
High gain and High P1dB
Glp=11dB , P1dB=14.5dBm (Typ.)
@ f=12GHz
APPLICATION
S to K band power Amplifiers
QUALITY GRADE
GG
ORDERING INFORMATION
Tape & reel
3000pcs./reel
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-5
V
VGSO
Gate to source voltage
-5
V
ID
Drain current
IDSS
mA
PT
Total power dissipation
100
mW
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-65~125
°C
ELECTRICAL CHARACTERISTICS
(Ta=25
°C )
Synbol
Parameter
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
Gate to drain breakdown voltage
Ig=-10
A
-5
-8
--
V
IDSS
Saturated drain current
VGS=0V,VDS=2.5V
35
60
120
mA
VGS(off)
Gate to source cut-off voltage
VDS=2.5V,ID=500
A
-0.1
-0.8
-2.0
V
P1dB
Output Power at 1dB gain
Compression
VDS=2.5V,ID=25mA
f=12GHz
12
14.5
--
dBm
Glp
Linear Power Gain
VDS=2.5V,ID=25mA
f=12GHz,Pin=-5dBm
9
11
--
dB
Outline Drawing
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Fig.1
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相關代理商/技術參數(shù) |
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| MGF4910D | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
| MGF4910E | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW MOISE InGaAs HEMT |
| MGF4914D | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
| MGF4914E | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW MOISE InGaAs HEMT |
| MGF4916 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT |
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