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參數(shù)資料
| 型號： | MGF1801B |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 23K |
| 代理商： | MGF1801B |
MGF1801B
MITSUBISHI SEMICONDUCTOR GaAs FET
MICROWAVE POWER GaAs FET
Nov. ′97
0
+90
-90
S
21
,S
12
vs. f.
1
S
21
5
S
12
S PARAMETERS
(Ta=25C,V
DS
=6V,I
D
=100mA)
Freq.
(GHz)
0.899
0.874
0.848
0.822
0.796
0.771
0.745
0.719
0.713
0.706
0.700
0.694
0.691
0.689
0.686
0.683
0.677
0.670
0.664
0.657
0.645
0.632
0.620
0.608
-56.8
-69.4
-82.1
-94.7
-107.4
-120.0
-132.7
-145.3
-153.3
-161.3
-169.3
-177.3
176.9
171.1
165.2
159.4
153.1
146.9
140.6
134.3
127.8
121.3
114.8
108.3
6.115
5.682
5.248
4.815
4.382
3.949
3.515
3.082
2.863
2.645
2.426
2.207
2.090
1.973
1.856
1.739
1.671
1.602
1.534
1.466
1.413
1.360
1.308
1.255
140.3
130.4
120.5
110.6
100.6
90.8
80.9
71.0
63.3
55.6
47.9
40.2
33.9
27.5
21.2
14.8
8.5
2.1
-4.3
-10.6
-17.0
-23.4
-29.7
-36.1
0.047
0.049
0.050
0.052
0.054
0.056
0.057
0.059
0.060
0.062
0.063
0.064
0.068
0.073
0.077
0.081
0.089
0.096
0.104
0.111
0.118
0.126
0.133
0.140
52.1
49.3
46.4
43.6
40.8
38.0
35.1
32.3
33.3
34.3
35.2
36.2
37.6
39.0
40.4
41.8
40.5
39.3
38.0
36.7
33.2
29.8
26.3
22.8
0.471
0.462
0.452
0.442
0.432
0.422
0.413
0.403
0.412
0.421
0.431
0.440
0.458
0.476
0.494
0.512
0.530
0.549
0.567
0.585
0.601
0.618
0.635
0.651
-25.2
-32.7
-40.1
-47.5
-54.9
-62.4
-69.8
-77.2
-84.2
-91.1
-98.1
-105.0
-110.3
-115.5
-120.8
-126.0
-130.8
-135.5
-140.3
-145.0
-149.4
-153.9
-158.3
-162.7
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
S
11
S
21
S
12
S
22
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
T
a
=25C
V
DS
=6V
I
D
=100mA
S
11
,S
22
vs. f.
-j50
-j10
0
25
50
250
+j10
+j25
+j50
-j100
+j100
-j250
+j250
S
22
S
11
12.0GHz
K
MSG/MAG
(dB)
0.371
0.394
0.431
0.485
0.558
0.657
0.789
0.964
1.006
1.064
1.142
1.245
1.202
1.172
1.153
1.146
1.072
1.011
0.962
0.922
0.893
0.867
0.844
0.823
21.2
20.7
20.2
19.7
19.1
18.5
17.9
17.2
16.3
14.8
13.6
12.4
12.1
11.8
11.5
11.0
11.1
11.6
11.7
11.2
10.8
10.4
9.9
9.5
0.5GHz
12.0GHz
0.5GHz
-j25
100
3
0.1
0.5GHz
4
12.0GHz
0
2
12.0GHz
0.5GHz
0.2
±1806
I
S
21
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF1801BT | TAPE CARRIER MICROWAVE POWER GaAs FET |
| MGF1908A | TAPE CARRIER LOW NOISE GaAs FET |
| MGF2407 | MICROWAVE POWER GaAs FET |
| MGF4316 | Super Low Noise InGaAs HEMT |
| MGF4319 | Super Low Noise InGaAs HEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF1801B_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
| MGF1801BT | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER MICROWAVE POWER GaAs FET |
| MGF1801BT_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER MICROWAVE POWER GaAs FET |
| MGF1902B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER LOW NOISE GaAs FET |
| MGF1903B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER LOW NOISE GaAs FET |
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