參數(shù)資料
型號(hào): MGF0952P
廠商: Mitsubishi Electric Corporation
英文描述: L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
中文描述:
文件頁數(shù): 24/50頁
文件大?。?/td> 1439K
代理商: MGF0952P
(24/50)
MGF0952P RF TEST DATA(CW)
Gp,Po,Id(RF),Ig(RF) v.s. Pin
MITSUBISHI ELECTRIC CORPORATION Mar./2005
Po v.s. Pin
freq.=3.3Hz IDQ=0.7A
14
16
18
20
22
24
26
28
30
32
34
36
38
40
5
10
15
20
25
30
35
Pin(dBm)
P
VD=10V
VD=9V
VD=8V
Gp v.s. Pin
freq.=3.3GHz IDQ=0.7
1
2
3
4
5
6
7
8
9
10
11
5
10
15
20
25
30
35
Pin(dBm)
G
VD=10V
VD=9V
VD=8V
Id(RF) v.s. Pin
freq.=3.3GHz IDQ=0.7A
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
5
10
15
20
25
30
35
Pin(dBm)
I
VD=10V
VD=9V
VD=8V
Ig(RF) v.s. Pin
freq.=3.3GHz IDQ=0.8A
-2
0
2
4
6
8
10
12
14
16
18
20
22
5
10
15
20
25
30
35
Pin(dBm)
I
VD=10V
VD=9V
VD=8V
相關(guān)PDF資料
PDF描述
MGF1302 LOW NOISE GaAs FET
MGF1303 LOW NOISE GaAs FET
MGF1303B LOW NOISE GaAs FET
MGF1304A FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
MGF1305 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGF0952P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF0953P_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage)
MGF100-30 制造商:SMC Corporation of America 功能描述:CYL, GUIDE 100MM BORE
MGF1302 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:LOW NOISE GaAs FET