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參數(shù)資料
| 型號： | MGF0921A-03 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, SMD, 3 PIN |
| 文件頁數(shù)： | 5/24頁 |
| 文件大?。?/td> | 430K |
| 代理商： | MGF0921A-03 |
MGF0921A RF TEST DATA(W-CDMA) VD=10V,IDQ=0.5A
ACLR v.s. Po
3GPP TEST MODEL1 64ch's 2carrier Signal
MITSUBISHI ELECTRIC CORPORATION
Mar./2005
(13/24)
ACLR -5MHz freq.=2.11GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
12
16
20
24
28
32
Po(dBm)
A
C
L
R
(d
B
c
)
Tc=80deg.C
Tc=25deg.C
Tc=-25deg.C
ACLR -10MHz
freq.=2.11GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
12
16
20
24
28
32
Po(dBm)
A
C
L
R
(d
B
c
)
Tc=80deg.C
Tc=25deg.C
Tc=-25deg.C
ACLR +5MHz
freq.=2.11GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
12
16
20
24
28
32
Po(dBm)
A
C
L
R
(d
B
c
)
Tc=80deg.C
Tc=25deg.C
Tc=-25deg.C
ACLR +10MHz
freq.=2.11GHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
12
16
20
24
28
32
Po(dBm)
A
C
L
R
(d
B
c
)
Tc=80deg.C
Tc=25deg.C
Tc=-25deg.C
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| MGF0951P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET Plastic Mold Lead-less PKG |
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| MGF0952P_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0953P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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