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參數(shù)資料
| 型號(hào)： | MGF0921A-01 |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, SMD, 3 PIN |
| 文件頁數(shù)： | 12/24頁 |
| 文件大?。?/td> | 430K |
| 代理商： | MGF0921A-01 |
MGF0921A TYPICAL CHARACTERISTICS
(2/24)
Mitsubishi Electric
Mar./2005
VDS=6V
ID=0.1A
f=1.9GHz
Po,Gp,PAE vs.Pin
0
5
10
15
20
25
30
35
40
-5
0
5
10
15
20
25
Pin(dBm)
P
o
(d
B
m
)
0
10
20
30
40
50
60
70
80
G
p
(d
B
),
P
A
E
(%
)
Vds=10V
Id(off)=500mA
f=1.9GHz
Po
Gp
PAE
Pi(SCL) vs.Po(SCL),IM3
-10
-5
0
5
10
15
20
25
30
35
40
-15
-10
-5
0
5
10
15
20
Pin(dBm)
P
o
(d
B
m
)
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
IM
3
(d
B
c)
VD=10V
ID=500mA
f1=1.90GHz
f2=1.91GHz
Po
IM3
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| MGF0951P | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
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| MGF4318E-30 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0951P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET Plastic Mold Lead-less PKG |
| MGF0951P_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0952P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] |
| MGF0952P_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0953P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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