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參數(shù)資料
| 型號(hào)： | MGF0911A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | L, S BAND POWER GaAs FET |
| 中文描述： | 升，S波段砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 23K |
| 代理商： | MGF0911A |
MGF0911A
MITSUBISHI SEMICONDUCTOR
GaAs FET
L, S BAND POWER GaAs FET
Nov. ′97
0
0
+90
-90
S
21
,S
12
vs. f.
0.1
S PARAMETERS
(Ta=25C,V
DS
=10V,I
D
=2.6A)
Freq.
(GHz)
0.986
0.985
0.984
0.983
0.982
0.981
0.980
0.979
0.978
0.976
0.975
0.974
0.973
0.972
0.971
0.970
0.969
0.968
0.967
0.966
0.965
0.965
0.964
0.963
0.962
0.961
-167.3
-171.3
-174.3
-175.5
-172.1
-173.9
-175.3
-176.3
-176.9
-177.9
-178.2
-179.3
-179.8
179.5
178.6
176.7
175.9
175.1
174.1
173.1
172.3
171.2
170.2
168.7
167.6
166.3
2.046
1.833
1.515
1.356
1.233
1.128
1.033
0.970
0.919
0.878
0.845
0.811
0.788
0.771
0.754
0.653
0.638
0.638
0.635
0.625
0.628
0.634
0.635
0.646
0.642
0.651
91.2
87.9
86.1
83.6
84.0
81.1
79.7
77.8
75.8
73.6
71.6
69.4
67.8
65.8
64.1
63.1
60.9
59.0
56.3
54.2
52.3
51.3
48.9
46.3
44.0
41.0
0.008
0.010
0.011
0.012
0.013
0.013
0.015
0.015
0.016
0.017
0.018
0.019
0.020
0.020
0.022
0.023
0.023
0.023
0.024
0.025
0.025
0.027
0.027
0.028
0.029
0.029
44.1
44.2
44.6
44.9
45.3
45.8
46.4
46.8
47.0
47.3
47.6
48.0
48.4
48.9
49.2
49.6
49.9
50.4
50.7
51.0
51.2
51.6
51.9
52.3
52.5
52.7
0.913
0.911
0.909
0.907
0.904
0.902
0.898
0.895
0.889
0.883
0.875
0.865
0.858
0.850
0.843
0.837
0.833
0.829
0.826
0.823
0.820
0.818
0.816
0.814
0.812
0.811
-178.6
-179.9
178.6
178.2
177.7
176.6
175.7
176.6
176.0
175.6
175.2
175.0
174.6
173.6
173.4
172.6
174.1
173.6
172.9
171.0
170.3
168.8
167.1
165.7
164.6
162.7
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
S
11
S
21
S
12
S
22
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
T
a
=25C
V
DS
=10V
I
D
=2.6A
S
11
,S
22
vs. f.
-j50
-j10
0
25
50
100
250
+j10
-j25
+j25
+j50
-j100
+j100
-j250
+j250
S
22
0.5GHz
S
11
3.0GHz
K
MSG/MAG
(dB)
0.515
0.567
0.583
0.675
0.683
0.713
0.736
0.785
0.815
0.835
0.900
0.951
0.989
1.011
1.050
1.149
1.170
1.221
1.242
1.256
1.267
1.292
1.315
1.327
1.366
1.412
23.1
22.7
21.8
21.2
20.3
19.6
19.3
18.7
18.2
17.5
17.1
16.8
15.8
14.7
14.1
13.9
13.7
12.7
12.3
11.9
11.6
11.4
11.0
10.1
9.8
9.4
S
12
3.0GHz
±180
0.2
3.0GHz
0.5GHz
0.5GHz
1
3
I
S
21
I
4
2
0.5GHz
S
21
3.0GHz
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0911A_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0911A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0912A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0912A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
| MGF0913A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L & S BAND GaAs FET [ SMD non - matched ] |
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