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參數(shù)資料
| 型號(hào)： | MGF0909A |
| 廠(chǎng)商： | Mitsubishi Electric Corporation |
| 英文描述： | L,S BAND POWER GaAs FET |
| 中文描述： | 升，S波段砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | MGF0909A |
MGF0909A
MITSUBISHI SEMICONDUCTOR GaAs FET
L, S BAND POWER GaAs FET
Nov. ′97
0
0
+90
-90
S
21
,S
12
vs. f.
0.1
S PARAMETERS
(Ta=25C,V
DS
=10V,I
D
=1.3A)
Freq.
(GHz)
0.968
0.966
0.966
0.965
0.964
0.963
0.961
0.960
0.959
0.959
0.959
0.958
0.958
0.957
0.958
0.958
0.957
0.956
0.954
0.954
0.953
0.953
0.953
0.948
0.956
0.944
-155.5
-159.7
-163.4
-166.8
-168.4
-171.3
-173.8
-175.4
-176.8
-178.7
-179.7
178.4
177.2
176.0
174.7
174.3
173.3
172.3
171.2
169.9
169.0
167.6
166.1
164.6
163.3
162.0
3.763
3.340
2.768
2.460
2.219
2.021
1.831
1.613
1.591
1.500
1.425
1.359
1.301
1.255
1.201
1.040
0.993
0.977
0.949
0.921
0.909
0.901
0.876
0.873
0.843
0.832
97.8
93.6
90.8
87.5
87.1
84.1
82.2
80.2
78.0
75.7
73.7
71.6
69.9
67.7
66.2
65.3
63.3
61.7
59.1
57.0
55.4
54.3
52.2
49.9
48.4
45.5
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.017
0.018
0.018
0.019
0.019
0.020
0.021
0.021
0.022
0.022
0.023
0.023
0.024
0.024
0.025
0.025
0.025
13.2
14.6
16.5
18.2
20.6
22.5
24.1
25.8
27.8
29.5
31.2
33.8
35.4
37.6
39.5
41.5
43.1
44.8
46.5
48.7
50.8
52.6
54.3
55.2
57.3
58.0
0.823
0.823
0.822
0.822
0.820
0.819
0.818
0.814
0.804
0.807
0.805
0.801
0.795
0.789
0.785
0.784
0.783
0.783
0.782
0.780
0.779
0.778
0.778
0.776
0.775
0.773
-177.6
-179.6
178.5
178.2
177.6
176.8
175.6
176.6
176.1
175.7
175.3
175.1
174.7
174.0
173.4
174.4
174.2
173.4
172.7
172.2
171.6
170.3
168.9
167.7
166.9
165.1
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
S
11
S
21
S
12
S
22
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
T
a
=25C
V
DS
=10V
I
D
=1.3A
S
11
,S
22
vs. f.
-j50
-j10
0
25
50
100
250
+j10
-j25
+j25
+j50
-j100
+j100
-j250
+j250
S
22
S
11
S
21
3.0GHz
K
MSG/MAG
(dB)
0.652
0.713
0.755
0.782
0.825
0.855
0.875
0.955
0.985
0.996
1.105
1.135
1.145
1.185
1.205
1.194
1.203
1.235
1.295
1.325
1.345
1.362
1.403
1.452
1.523
1.554
25.4
25.2
24.7
23.4
23.1
23.0
22.4
19.0
19.2
19.0
18.9
18.5
18.0
16.9
16.5
16.2
15.5
14.9
14.7
14.5
13.8
12.8
12.3
11.9
10.8
10.5
S
12
3.0GHz
±180
0.2
3.0GHz
3.0GHz
0.5GHz
1
0.5GHz
3
I
S
21
I
4
2
5
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| MGF0913A | L & S BAND GaAs FET [ SMD non - matched ] |
| MGF0915A | L & S BAND GaAs FET[ SMD non - matched ] |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0909A_1 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0909A_11 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET(small signal gain stage) |
| MGF0910A | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0910A_1 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0910A_11 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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