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參數資料
| 型號： | MGA-412P8 |
| 廠商： | Avago Technologies Ltd. |
| 英文描述： | GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications |
| 中文描述： | GaAs增強模式pHEMT功率放大器優(yōu)化的IEEE 802.11b / g應用 |
| 文件頁數： | 6/8頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MGA-412P8 |
6
Figure 6. Output Power and Gain vs Input Power
Figure 7. Detector vs Output Power
Figure 8. EVM & Current vs Output Power
Figure 9. EVM vs Modulated Output Power
Figure 10. Total Current vs Modulated Output Power
Figure 11. PAE vs Modulated Output Power
MGA-412P8 Typical Performance I
Tc = +25 °C, Vdd = 3.3V Input Signal=CW unless stated otherwise.
MGA-412P8 Typical Performance II
Tc = +25 °C, Vdd = 3.3V Input Signal=OFDM signal with 54Mbps, Modulation=64QAM unless stated otherwise.
Pout and Gain vs Pin
0
5
10
15
20
25
30
-25
-20
-15
-10
-5
0
5
Input Power (dBm)
P
Pout
Gain
Vdet vs Pout
0
0.5
1
1.5
2
2.5
5
7
9
11
13
15
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19
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23
25
27
Output Power (dBm)
D
VDD=3V
VDD=3.3V
VDD=3.6V
EVM & Current vs Modulated Pout
0
1
2
3
4
5
6
7
8
9
10
11
12
5
6
7
8
9
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
Modulated Output Power (dBm)
E
0
20
40
60
80
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120
140
160
180
C
EVM
Current
EVM vs Modulated Pout
0
1
2
3
4
5
6
7
8
9
10
11
12
5
7
9
11
Modulated Output Power (dBm)
13
15
17
19
21
23
25
E
VDD=3.0V
VDD=3.3V
VDD=3.6V
Total current vs Modulated Output Power
0
20
40
60
80
100
120
140
160
180
5
7
9
11
13
15
17
19
21
23
25
Modulated Output Power(dBm)
I
VDD=3.0V
VDD=3.3V
VDD=3.6V
PAE vs Modulated Output Power
0
10
20
30
40
50
60
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Modulated Output Power (dBm)
P
相關PDF資料 |
PDF描述 |
|---|---|
| MGA-412P8-BLKG | GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications |
| MGA-412P8-TR1G | GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications |
| MGA-412P8-TR2G | GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications |
| MGB15N35CL | Ignition IGBT 15 Amps, 350 Volts(15A，350V鉗位電壓，點火絕緣柵雙極型晶體管（D2PAK封裝）) |
| MGB15N38CL | Ignition IGBT 15 Amps, 380 Volts(15A，380V鉗位電壓，點火絕緣柵雙極型晶體管（D2PAK封裝）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MGA-412P8_08 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications |
| MGA-412P8-BLKG | 功能描述:射頻放大器 Amplifier RFIC GaAs RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MGA-412P8-TR1G | 功能描述:射頻放大器 Amplifier RFIC GaAs RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MGA-412P8-TR2G | 功能描述:射頻放大器 Amplifier RFIC GaAs RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MGA-425P8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package |
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