參數(shù)資料
型號(hào)： MG300Q2YS61
廠商： Toshiba Corporation
英文描述： High Power Switching Applications Motor Control Applications
中文描述： 大功率開關(guān)應(yīng)用的電機(jī)控制應(yīng)用
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 239K
代理商： MG300Q2YS61
MG300Q2YS61
2002-08-29
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG300Q2YS61
High Power Switching Applications
Motor Control Applications
High input impedance
High speed: t
f
= 0.3 μs (max)
Inductive load
Low saturation voltage: V
CE (sat)
= 2.6 V (max)
Enhancement-mode
Includes a complete half bridge in one package.
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings
(Tc 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
1200
V
Gate-emitter voltage
V
GES
20
V
Collector current
DC (Tc 80°C)
I
C
300
A
Forward current
DC (Tc 80°C)
I
F
300
A
Collector power dissipation
(Tc 25°C)
P
C
2700
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
40 to 125
°C
Isolation voltage
V
isol
2500
(AC 1 minute)
Vrms
Terminal
3
N·m
Screw torque
Mounting
3
N·m
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-109C4A
Weight: 430 g (typ.)
G1
E1
E1/C2
C1
E2
G2
E2
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