參數(shù)資料
型號: MG25Q6ES42
廠商: Toshiba Corporation
英文描述: Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管)
中文描述: 硅N通道IGBT的(不適用溝道絕緣柵雙極型晶體管)
文件頁數(shù): 3/5頁
文件大?。?/td> 262K
代理商: MG25Q6ES42
相關(guān)PDF資料
PDF描述
MG25Q6ES51A Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管)
MG25Q6ES51 Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管)
MG300Q1US11 CONNECTOR
MG300Q1US41 Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
MG300Q1US51 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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參數(shù)描述
MG25Q6ES50 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG25Q6ES50A 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG25Q6ES51 制造商:n/a 功能描述:IGBT Module 制造商:Toshiba America Electronic Components 功能描述:
MG25Q6ES51A 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG25STT 制造商:. 功能描述: