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參數(shù)資料
| 型號(hào)： | MG1200V1US51 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | MG1200V1US51 |
MG1200V1US51
2001-06-26
2
ELECTRICAL CHARACTERISTICS
(Tc = 125°C : except thermal resistance)
CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Gate Laekage Current
I
GES
V
GE
= ±20 V, V
CE
= 0 V
―
―
±50
nA
Collector Cut
Off Current
I
CES
V
CE
= 1700 V, V
GE
= 0 V
―
―
100
mA
Gate
Emitter Cut
Off Voltage
V
GE (off)
V
CE
= 5 V, I
C
= 1.2 A
3.0
―
7.0
V
Collecter
Emitter Saturation Voltage
V
CE (sat)
V
GE
= 15 V, I
C
= 1200 A
―
―
5.0
V
Input Capacitance
C
ies
V
CE
= 10 V, V
GE
= 0 V,
f = 300 kHz
―
130
―
nF
Rise Time
t
r
―
―
0.7
μs
Turn
On Time
t
on
―
―
1.0
μs
Fall Time
t
f
―
―
0.8
μs
Switching Time
(Note 1)
Turn
Off Time
t
off
V
CC
= 900 V, I
C
= 1200 A
V
GE
= ±15 V, R
G
= 1.8
(Inductive load: Ls = 150 nH)
―
―
1.5
μs
Forward Voltage
V
F
I
F
= 1200 A, V
GE
= 0 V
―
―
3.2
V
Reverse Recovery Time
(Note 1)
t
rr
I
F
= 1200 A, V
GE
= 15 V
di/dt = 4000 A/μs, V
CC
= 900 V
―
―
0.8
μs
Turn
On Loss
Eon
―
250
―
mJ
Turn
Off Loss
Eoff
V
CC
= 900 V, I
C
= 1200 A
V
GE
= ±15 V, R
G
= 1.8
―
500
―
mJ
Switching
Dissipation
(Note 1)
Diode Loss
Edsw
I
F
= 1200 A, V
GE
=
15 V
di/dt = 4000 A/μs, V
CC
= 900 V
―
300
―
mJ
―
―
0.018
°C/W
Thermal Resistance
R
th (j
c)
Transistor (IGBT) Stage
Diode Stage
―
―
0.035
°C/W
Note 1: Test circuit and timing chart of switching time, reverse recovery time and switching dissipation.
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