參數(shù)資料
型號(hào): MG1054-11
廠商: MICROSEMI CORP-LOWELL
元件分類(lèi): 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 23 GHz - 25 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
封裝: CERAMIC, ROHS COMPLIANT, M11
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 169K
代理商: MG1054-11
MG1041 – MG1059
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
Copyright
2008
Rev: 2009-01-19
GUNN Diodes
Anode Heat Sink
TM
Features
High Reliability
Low-Phase Noise
9.5–35.5 GHz Operation
Pulsed and CW Designs to 20 mW
Applications
Motion Detectors
Transmitters and Receivers
Beacons
Automotive Collision Avoidance Radars
Radars
Radiometers
Instrumentation
Description
Microsemi’s
GaAs
Gunn
diodes,
epi-up
(anode
heatsink), are fabricated from epitaxial layers grown
at MSC by the Vapor Phase Epitaxy technique. The
layers are processed using proprietary techniques
resulting in ultra- low phase and 1/f noise. The diodes
are available in a variety of microwave ceramic
packages for operation from 9.5–35.5 GHz.
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