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參數(shù)資料
| 型號： | MG100Q2YS51A |
| 廠商： | Toshiba Corporation |
| 英文描述： | CABLE, EHT, RED, 5.2MM, 25M; Area, conductor CSA:0.5mm2; Conductor make-up:7/0.3mm; Voltage rating, AC:2500V dc; Current rating:10A; Colour, primary insulation:Red; Material, primary insulation:PVC; Diameter, External:5.2mm; Length, RoHS Compliant: Yes |
| 中文描述： | N通道IGBT的（高PWER開關，發(fā)動機控制應用） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 347K |
| 代理商： | MG100Q2YS51A |
相關PDF資料 |
PDF描述 |
|---|---|
| MG100Q2YS51 | UltraThin Wireless Access Point, Dual 802.11 a/b/g Radios; Approval Categories:UL, EN & IEC: 60950-I; EMC FCC Part 15 Class B, EN 301 489-1-17; Data Rate Max:48Mbps; External Depth:1.8"; External Height:4.2"; External Width:7.7" RoHS Compliant: Yes |
| MG100Q2YK1 | TRANSISTOR MODULES |
| MG100Q2YL1 | TRANSISTOR MODULES |
| MG100Q2Y | HIGH POWER SWITCHING APPLICATIONS. |
| MG100Q2YS42 | WIRE, PTFE, A, WHITE, 19/0.2MM, 100M; Area, conductor CSA:0.597mm2; Conductor make-up:19/020; Voltage rating, AC:300V; Current rating:11A; Colour, primary insulation:White; Material, primary insulation:PTFE; Diameter, RoHS Compliant: Yes |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MG100Q2YS65H | 制造商:n/a 功能描述:IGBT Module |
| MG1010-11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1010C | 制造商:REGAL BELOIT 功能描述:MARATHON PARTS |
| MG1011-15 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1012-15 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
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