| 型號: | MG100Q2YS51 |
| 廠商: | Toshiba Corporation |
| 英文描述: | UltraThin Wireless Access Point, Dual 802.11 a/b/g Radios; Approval Categories:UL, EN & IEC: 60950-I; EMC FCC Part 15 Class B, EN 301 489-1-17; Data Rate Max:48Mbps; External Depth:1.8"; External Height:4.2"; External Width:7.7" RoHS Compliant: Yes |
| 中文描述: | N通道IGBT的(高PWER開關(guān),發(fā)動機控制應(yīng)用) |
| 文件頁數(shù): | 3/6頁 |
| 文件大?。?/td> | 341K |
| 代理商: | MG100Q2YS51 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MG100Q2YK1 | TRANSISTOR MODULES |
| MG100Q2YL1 | TRANSISTOR MODULES |
| MG100Q2Y | HIGH POWER SWITCHING APPLICATIONS. |
| MG100Q2YS42 | WIRE, PTFE, A, WHITE, 19/0.2MM, 100M; Area, conductor CSA:0.597mm2; Conductor make-up:19/020; Voltage rating, AC:300V; Current rating:11A; Colour, primary insulation:White; Material, primary insulation:PTFE; Diameter, RoHS Compliant: Yes |
| MG1200V1US51 | TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MG100Q2YS51A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG100Q2YS65H | 制造商:n/a 功能描述:IGBT Module |
| MG1010-11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1010C | 制造商:REGAL BELOIT 功能描述:MARATHON PARTS |
| MG1011-15 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |