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參數(shù)資料
| 型號(hào)： | MG100Q2YS50 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 封裝： | 2-95A4A, 7 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 543K |
| 代理商： | MG100Q2YS50 |
MG100Q2YS50
2001-04-20
1
TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q2YS50
High Power Switching Applications
Motor Control Applications
High input impedance
High speed : tf = 0.3s (Max)
@Inductive Load
Low saturation voltage
: VCE (sat) = 3.6V (Max)
Enhancement-mode
Includes a complete half bridge in one package.
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
VCES
1200
V
Gate-emitter voltage
VGES
±20
V
DC
IC
(25°C / 80°C)
150 / 100
Collector current
1ms
ICP
(25°C / 80°C)
300 / 200
A
DC
IF
100
Forward current
1ms
IFM
200
A
Collector power dissipation (Tc = 25°C)
PC
660
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
40 ~ 125
°C
Isolation voltage
VIsol
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
―
3 / 3
Nm
Unit: mm
JEDEC
―
EIAJ
―
TOSHIBA
2-95A4A
Weight: 255g
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MG100Q2YS51A | 150 A, 1200 V, N-CHANNEL IGBT |
| MG100Q2YS51A | 150 A, 1200 V, N-CHANNEL IGBT |
| MG10H4GM1 | 10 A, 500 V, 0.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| MG10G6EL1 | 10 A, 400 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MG10H6EM1 | 10 A, 500 V, 0.5 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MG100Q2YS50A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG100Q2YS51 | 制造商:n/a 功能描述:IGBT Module |
| MG100Q2YS51A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
| MG100Q2YS65H | 制造商:n/a 功能描述:IGBT Module |
| MG1010-11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
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