參數(shù)資料
型號(hào): MF816M-GNCAVXX
廠商: Mitsubishi Electric Corporation
英文描述: 8/16-bit Data Bus Flash Memory Card
中文描述: 16位產(chǎn)品數(shù)據(jù)總線閃存卡
文件頁數(shù): 18/22頁
文件大?。?/td> 148K
代理商: MF816M-GNCAVXX
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
MITSUBISHI
ELECTRIC
18/22
Feb.1999 Rev2.0
SWITCHING CHARACTERISTICS (ATTRIBUTE MEMORY)
Read Cycle
(Ta= 0 to 55°C, V
CC
=5V+/-5%, unless otherwise noted)
Limits
Typ.
Min.
300
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
tcRR
ta(A)R
ta(CE)R
ta(OE)R
tdis(dis)R
tdis(OE)R
ten(CE)R
ten(CE)R
tv(A)R
Read cycle time
Address access time
Card enable access time
Output enable access time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time after address change
300
300
150
100
100
5
5
0
TIMING REQUIREMENTS (ATTRIBUTE MEMORY)
Write Cycle GM series only
(Ta= 0 to 55°C, V
CC
=5V+/-5%, unless otherwise noted)
Limits
Typ.
Min.
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
ms
t
AS
R
t
AH
R
t
CS
R
t
CH
R
t
DS
R
t
DH
R
t
OES
R
t
OEH
R
t
WP
R
t
DL
R
t
BL
R
t
WC
R
Address setup time
Address hold time
CE setup time
CE hold time
Data setup time
Data hold time
OE setup time
OE hold time
Write pulse width
Data latch time
Byte load cycle time
Write cycle time
30
30
40
30
120
40
30
40
170
120
100
10
TIMING DIAGRAM (Attribute Memory)
Read
Symbol
Parameter
Symbol
Parameter
t
C
RR
ta(A)R
An
V
IH
V
IL
CE#
ta(CE)R
ten(CE)R
tv(A)R
tdis(CE)R
V
IH
OUTPUT VALID
ten(OE)R
High-Z
Dm
(D
OUT
)
V
OH
V
OL
V
IL
tdis(OE)R
OE#
V
IH
V
IL
ta(OE)R
WE# =“H” level, REG# =”L” level
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