參數(shù)資料
型號: MF6640M-02BJxx
廠商: Mitsubishi Electric Corporation
英文描述: 2.5 Flash Drive
中文描述: 2.5閃存盤
文件頁數(shù): 13/18頁
文件大?。?/td> 145K
代理商: MF6640M-02BJXX
MITSUBISHI STORAGE CARD
Preliminary
MF6XXXX-02BJXX series
FLASH DRIVES
Oct.2000
. Rev. 0.3
MITSUBISHI
ELECTRIC
13/18
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
Supply voltage
V
i
Input voltage
V
o
Output voltage
P
d
Power dissipation
T
opr
Operating temperature
T
stg
Storage temperature
Parameter
Conditions
Ratings
-0.3~6.2
-0.3~V
DD
+0.3
-0.3~V
DD
+0.3
1.2
0~60
-10~80
Unit
V
V
V
W
°C
°C
With respect to GND
T
a
= 25
°C
RECOMMENDED OPERATING CONDITIONS
Limits
Typ.
5.0
Symbol
V
DD
(5V)
GND
V
IH
V
IL
Parameter
Min.
4.5
Max.
5.5
Unit
V
V
V
V
V
DD
Supply voltage
System ground
High input voltage
Low input voltage
0
0.7V
DD
0
V
DD
0.8
DC ELECTRICAL CHARACTERISTICS
(Ta=0~60°C, V
DD
=5V±10%, unless otherwise noted)
Limits
Typ.
Symbol
Parameter
Test Condition
Min.
4.5V
Max.
5.5V
Unit
V
OH
High output voltage
I
OH
=4mA(4.5V)
INTRQ,
INPACK#,
DASP#,
PDIAG#
the other
outputs
INTRQ,
INPACK#,
DASP#,
PDIAG#
the other
outputs
DD15-DD0
0.8V
DD
-
V
I
OH
=8mA(4.5V)
V
OL
Low output voltage
I
OL
=-4mA(4.5V)
-
0.4
V
I
OL
=-8mA(4.5V)
I
OZ
Output current in off
state
Active supply current
(Read)
Active supply current
(Write)
Standby current
(Auto power down)
CS0# = CS1# = V
IH
-
±10
μA
I
CCR
Output open
70
110
mA
I
CCW
100
140
mA
I
CCS
CS0# = CS1# = V
DD
DD15-DD0 = GND
Other inputs = V
DD
or GND
CS0# = CS1# = V
DD
DD15-DD0 = GND
Other inputs = V
DD
or GND
2.0
4.0
mA
I
CCD
Sleep current
(Sleep command)
500
800
μA
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