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參數(shù)資料
| 型號： | MF38M1-LCDAGXX |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8/16-bit Data Bus Static RAM Card |
| 中文描述： | 16位產(chǎn)品數(shù)據(jù)總線靜態(tài)存儲器卡 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 258K |
| 代理商： | MF38M1-LCDAGXX |
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MITSUBISHI
ELECTRIC
5/9
CAPACITANCE
Limits
Typ.
Min.
Max.
30
C
I
Input capacitance
V
I
=GND, V
I
=25mVrms
f=1 MH
Z
, Ta=25°C
V
O
=GND, V
O
=25mVrms f=1 MH
Z
,
Ta=25°C
pF
C
O
Output capacitance
20
pF
Note 4 : These parameters are not 100% tested.
SWITCHING CHARACTERISTICS
Read Cycle
(LC series Ta= 0~55°C, V
CC
=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, V
CC
=4.50~5.25V, unless otherwise noted)
Limits
Typ.
Symbol
t
CR
t
a
(A)
t
a
(CE)
t
a
(OE)
t
dis
(CE)
t
dis
(OE)
t
en
(CE)
t
en
(OE)
t
V
(A)
Parameter
Min.
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
Card enable access time
Output enable accese time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time (after address change)
200
200
200
100
90
90
5
5
0
TIMING REQUIREMENTS
Write Cycle
(LC series Ta= 0~55°C, V
CC
=4.50~5.25V, unless otherwise noted)
(LS series Ta=-20~70°C, V
CC
=4.50~5.25V, unless otherwise noted)
Limits
Typ.
Symbol
t
CW
t
w(WE)
t
su(A)
t
su(A-WEH)
t
su(CE-WEH)
t
su(D-WEH)
t
h(D)
t
rec(WE)
t
dis(WE)
t
dis(OE)
t
en(WE)
t
en(OE)
t
su(OE-WE)
t
h(OE-WE)
Parameter
Min.
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write cycle time
Write pulse width
Address set up time
Address set up time with respect to WE# high
Card enable set up time with respect to WE# high
Data set up time with respect to WE# high
Data hold time
Write recovery time
Output disable time (from WE#)
Output disable time (from OE#)
Output enable time (from WE#)
Output enable time (from OE#)
OE# set up time with respect to WE# low
OE# hold time with respect to WE# high
200
120
20
140
140
60
30
30
90
90
5
5
10
10
Symbol
Unit
Parameter
Test conditions
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