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參數(shù)資料
| 型號： | MF34M1-J9CATXX |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8/16-bit Data Bus Static RAM Card |
| 中文描述： | 16位產(chǎn)品數(shù)據(jù)總線靜態(tài)存儲器卡 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 102K |
| 代理商： | MF34M1-J9CATXX |
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
MITSUBISHI
ELECTRIC
6/14 Apr. 1999 Rev. 1.1
13. ELECTRICAL CHARACTERISTICS
(Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Typ.
Unit
Min.
2.4
Max.
V
OH
V
OL
I
IH
I
IL
High output voltage
Low output voltage
High input current
Low input current
I
OH
= -1.0mA
I
OL
=2mA
V
I
=Vcc V
V
I
=0V
V
V
μA
μA
0.4
10
-70
-10
10
CE1#, CE2#, WE#, OE#, REG#
Other inputs
CE1#=CE2#=V
IH
or OE#=V
IH
WE#=V
IH
,
V
O
=Vcc
CE1#=CE2#=V
IH
or OE#=V
IH
WE#=V
IH
,
V
O
=0V
CE1#=CE2#=V
IL
, other inputs
=V
IH
or V
IL
,Outputs=open
CE1#=CE2#
≤
0.2V, other
inputs
≤
0.2V or
≥
Vcc-0.2V, Outputs=open
CE1#=CE2#=V
IH
other inputs=V
IH
or V
IL
CE1#=CE2#
≥
Vcc-0.2V
other inputs
≤
0.2V or
≥
Vcc-0.2V
-10
I
OZH
High output current
in off state
Low output current
in off state
Active supply
current 1
Active supply
current 2
μA
I
OZL
-10
μA
Icc 1 1
64KB~512KB
1MB~4MB
64KB~512KB
170
230
160
mA
Icc 1 2
mA
1MB~4MB
64KB~4MB
220
10
(17)
0.45
(7.45)
0.65
(7.65)
2.47
Icc 2 1
Standby supply
current 1
Standby supply
current 2
mA
Icc 2 2
64KB~512KB
mA
1MB~4MB
VBDET1
Battery detect
reference voltage
Battery detect
reference voltage
Vcc=5V, Ta=25°C
2.27
2.37
V
VBDET2
Vcc=5V, Ta=25°C
2.55
2.65
2.75
V
Note 2 : Currents flowing into the card are taken as positive (unsigned).
3 : Typical values are measured at Vcc=5V, Ta=25°C.
4 : The figure in the parentheses indicates the standby current limits when the built-in auxiliary battery is
not fully charged.
14. CAPACITANCE
Limits
Typ.
Min.
Max.
C
I
Input capacitance
V
I
=GND, v
i
=25mVrms
f=1MH
Z
, Ta=25°C
30
pF
C
O
Output Capacitance
Vo
=
GND, vo
=
25mVrms
f
=
1MHz, Ta=25°C
20
pF
Note 4 : These parameters are not 100% tested.
Symbol
Unit
Parameter
Test conditions
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