參數(shù)資料
型號(hào)： MEA95-06DA
廠商： IXYS CORP
元件分類(lèi)： 參考電壓二極管
英文描述： Fast Recovery Epitaxial Diode Module(FRED)(快速恢復(fù)外延型二極管模塊)
中文描述： 95 A, 600 V, SILICON, RECTIFIER DIODE, TO-240AA
封裝： MODULE-3
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 54K
代理商： MEA95-06DA
2000 IXYS All rights reserved
1 - 2
75
75
142
95
TBD
1200
1300
Fast Recovery
Epitaxial Diode
(FRED) Module
Dimensions in mm (1 mm = 0.0394")
Features
G
International standard package
with DCB ceramic base plate
G
Planar passivated chips
G
Short recovery time
G
Low switching losses
G
Soft recovery behaviour
G
Isolation voltage 3600 V~
G
UL registered E 72873
Applications
G
Antiparallel diode for high frequency
switching devices
G
Free wheeling diode in converters
and motor control circuits
G
Inductive heating and melting
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
High reliability circuit operation
G
Low voltage peaks for reduced
protection circuits
G
Low noise switching
G
Low losses
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
90
-40...+150
-40...+125
110
3000
3600
12.7
9.6
50
280
2.5-4/22-35
2.5-4/22-35
1.01
2.85
0.550
0.450
2
0.5
34
100
1.36
1.55
2.05
2.09
300
100
300
200
250
300
14
21
1080
1170
7200
7100
5800
5700
1
2
3
1
2
3
1
2
3
V
RSM
V
V
RRM
V
Type
MEA95-06 DA
MEK 95-06 DA
MEE 95-06 DA
600
600
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAV
x
I
FRM
I
FSM
T
case
=
T
case
=
t
P
VJM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
C
C; rectangular, d = 0.5
A
A
A
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
A
I
2
t
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A
2
s
A
2
s
T
VJ
T
stg
T
Hmax
P
tot
V
ISOL
C
C
C
T
case
= 25 C
50/60 Hz, RMS t = 1 min
I
ISOL
1 mA
Mounting torque (M5)
Terminal connection torque (M5)
W
V~
V~
t = 1 s
M
d
Nm/lb.in.
Nm/lb.in.
d
S
d
A
a
Creep distance on surface
Strike distance through air
Maximum allowable acceleration
mm
mm
m/s
2
Weight
g
Symbol
Test Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
I
F
= A;
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
T
VJ
=125 C
T
VJ
= 25 C
T
VJ
=125 C
T
VJ
= 25 C
mA
mA
mA
V
F
V
V
V
V
I
F
= A;
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
For power-loss calculations only
T
VJ
= 125°C
DC current
DC current
V
m
K/W
K/W
I
F
V
-di/dt =
=
=
A
V
A/ s
T
VJ
= 100 C
T
VJ
= 25 C
T
VJ
= 100 C
ns
A
A
TO-240 AA
1
2
3
MEA 95-06 DA
MEK 95-06 DA
MEE 95-06 DA
V
RRM
= 600 V
I
FAV
= 95 A
t
rr
= 250 ns
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