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參數(shù)資料
| 型號： | MDD255-18N1 |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High Power Diode Modules |
| 中文描述： | 270 A, 1800 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 62K |
| 代理商： | MDD255-18N1 |
2000 IXYS All rights reserved
1 - 3
V
RSM
V
DSM
V
V
RRM
V
DRM
V
Type
1300
1500
1700
1900
2100
2300
1200
1400
1600
1800
2000
2200
MDD 255-12N1
MDD 255-14N1
MDD 255-16N1
MDD 255-18N1
MDD 255-20N1
MDD 255-22N1
I
FRMS
= 2x 450 A
I
FAVM
= 2x 270 A
V
RRM
= 1200-2200 V
Features
G
International standard package
G
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
G
Planar passivated chips
G
Isolation voltage 3600 V~
G
UL registered E 72873
Applications
G
Supplies for DC power equipment
G
DC supply for PWM inverter
G
Field supply for DC motors
G
Battery DC power supplies
Advantages
G
Simple mounting
G
Improved temperature and power
cycling
G
Reduced protection circuits
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FSM
T
VJ
= T
T
C
= 100 C; 180 sine
T
VJ
= 45 C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
450
270
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
9500
10200
A
A
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
8400
9000
A
A
i
2
dt
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
451 000
437 000
A
2
s
A
2
s
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
353 000
340 000
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
V
ISOL
-40...+150
C
C
C
150
-40...+125
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
t = 1 min
t = 1 s
3000
3600
V~
V~
M
d
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750
Weight
g
Symbol
I
RRM
V
F
V
T0
r
T
R
thJC
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 600 A; T
VJ
= 25 C
For power-loss calculations only
T
VJ
= T
VJM
per diode; DC current
per module
per diode; DC current
per module
Characteristic Values
30
mA
1.4
V
0.8
0.6
V
m
0.140
0.07
0.18
0.09
K/W
K/W
K/W
K/W
other values
see MCC 255
R
thJK
Q
S
I
RM
d
S
d
A
a
T
VJ
= 125 C; I
F
= 400 A; -di/dt = 50 A/ s
700
260
C
A
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s
2
MDD 255
High Power
Diode Modules
3
1
2
1
2
3
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
相關PDF資料 |
PDF描述 |
|---|---|
| MDD255-20N1 | High Power Diode Modules |
| MDD255-22N1 | High Power Diode Modules |
| MDD26 | Diode Modules |
| MDD26-08N1B | Diode Modules |
| MDD26-12N1B | Diode Modules |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MDD255-20N1 | 功能描述:分立半導體模塊 255 Amps 2000V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MDD255-22N1 | 功能描述:分立半導體模塊 255 Amps 2200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MDD26 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Diode Modules |
| MDD26-08N1B | 功能描述:分立半導體模塊 26 Amps 800V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MDD26-12N1B | 功能描述:分立半導體模塊 26 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
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