參數(shù)資料
型號(hào)： HGTP10N40F1D
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
中文描述： 12 A, 400 V, N-CHANNEL IGBT, TO-220AB
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 34K
代理商： HGTP10N40F1D
3-26
Specifications HGTP10N40F1D, HGTP10N50F1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTP10N40F1D
HGTP10N50F1D
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 1.25mA, V
GE
= 0V
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
I
CES
V
GE
= V
CE
, I
C
= 1mA
T
J
= +150
o
C, V
CE
= 400V
T
J
= +150
o
C, V
CE
= 500V
V
GE
=
±
20V, V
CE
= 0V
T
J
= +150
o
C, I
C
= 5A, V
GE
= 10V
T
J
= +150
o
C, I
C
= 5A, V
GE
= 15V
T
J
= +25
o
C, I
C
= 5A, V
GE
= 10V
T
J
= +25
o
C, I
C
= 5A, V
GE
= 15V
I
C
= 5A, V
CE
= 10V
I
C
= 5A, V
CE
= 10V
Resistive Load, I
C
= 5A,
V
CE
= 400V, R
L
= 80
,
T
J
= +150
o
C, V
GE
= 10V,
R
G
= 25
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector
Current
-
1.25
-
-
mA
-
-
-
1.25
mA
Gate-Emitter Leakage Current
I
GES
V
CE(ON)
-
100
-
100
nA
Collector-Emitter On-Voltage
-
2.5
-
2.5
V
-
2.2
-
2.2
V
-
2.5
-
2.5
V
-
2.2
-
2.2
V
Gate-Emitter Plateau Voltage
V
GEP
Q
G(ON)
t
D(ON)
t
RI
t
D(OFF)
t
FI
W
OFF
5.3 (Typ)
V
On-State Gate Charge
13.4 (Typ)
nC
Turn-On Delay Time
45 (Typ)
ns
Rise Time
35 (Typ)
ns
Turn-Off Delay Time
130 (Typ)
ns
Fall Time
1400 (Typ)
ns
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
0.64 (Typ)
mJ
Turn-Off Delay Time
t
D(OFF)I
t
FI
W
OFF
Inductive Load (See Figure 13),
I
C
= 5A, V
CE(CLP)
= 400V, R
L
=
80
, L = 50
μ
H, T
J
= +150
o
C, V
GE
=
10V, R
G
= 25
-
375
-
375
ns
Fall Time
-
1200
-
1200
ns
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
-
1.2
-
1.2
mJ
Thermal Resistance Junction-to-
Case (IGBT)
R
θ
JC
-
1.67
-
1.67
o
C/W
Thermal Resistance of Diode
R
θ
JC
-
2.0
-
2.0
o
C/W
Diode Forward Voltage
V
EC
I
EC
= 10A
-
1.7
-
1.7
V
Diode Reverse Recovery Time
t
RR
I
EC
= 10A, dI
EC
/dt = 100A/
μ
s
-
60
-
60
ns
Typical Performance Curves
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
12
10
8
6
4
2
0
I
C
,
0
2
4
6
8
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE TEST, V
CE
= 10V
PULSE DURATION = 250
μ
s
DUTY CYCLE < 2%
T
C
= -55
o
C
T
C
= +25
o
C
T
C
= +150
o
C
T
C
= -55
o
C
10
8
6
4
2
0
I
C
,
0
2
4
6
8
10
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%
T
C
= +25
C
V
G
V
GE
= 10V
V
GE
= 6.0V
V
GE
= 5.5V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
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