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參數(shù)資料
| 型號： | MCZ79076EGR2 |
| 廠商： | Freescale Semiconductor |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 0K |
| 描述： | IC IGNITION CTRL ELECTR 16-SOIC |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 系列： | * |
| 類型： | * |
| 應(yīng)用： | * |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC W |
| 包裝： | 帶卷 (TR) |
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
79076
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Reference High/Un-Clamped (27)
VCC = 4.0 V, IR = sourcing 100 mA, Ref/Dwell = 3.0 V, Advance =
1.0 V, EST = Bypass = 0 V
V(R)HI/UNCL
3.2
3.36
-
V
Reference High/Clamped (27)
VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
IR = sourcing 10 A
IR = sourcing 1.0 mA
V(R)HI/CL
-
12
5.41
15.3
6.0
-
V
CONTROLS
Dwell Control Negative Clamp Voltage (27)
VCC = 16 V, IDC = sourcing 100 A, Ref/Dwell = Advance = 1.0 V, EST
= Bypass = 0 V
V(DC)-CL
0.5
0.7
0.8
V
Dwell Control Positive Clamp Voltage (27)
VCC = 16 V, IDC = sinking 100 A, Ref/Dwell = 1.0 V, Advance = Open,
EST = Bypass = 0 V
V(DC)+CL
8.0
8.2
8.4
V
Dwell Control Charge Current (27)
VCC = 16 V, Ref/Dwell = 1.0 V, Advance = Dwell Control = 3.0 V, EST
= Bypass = 0 V
I(DC)CHG
30
47
58
A
Dwell Control Discharge Current (27)
VCC = 16 V, Current Sense = 0.5 V, Ref/Dwell = Advance = 1.0 V, EST
= Bypass = 0 V
I(DC)DISCHG
18
33
48
A
Dwell Control Input Current (27)
VCC = 16 V, Ref/Dwell = Advance = 1.0 V, EST = Bypass = 0 V, Dwell
Control = 7.0 V
I(DC)SINK
-
1.1
2.5
A
RPM Detect Charge Current ON (27)
VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass = 0 V
I(RPM)CHG
-4.0
0.54
1.0
mA
RPM Detect Current (27)
VCC = 16 V, 1.0 V = Ref/Dwell = Advance = 3.0 V, EST = Bypass = 0 V
RPM Detect = 0.5 V
RPM Detect = 1.5 V
I(RPM)LKG
04.0
-0.1
0.55
0.01
1.0
0.1
A
RPM Detect Clamp Voltage (27)
VCC = 16 V, Ref/Dwell = 3.0 V, Advance = 1.0 V, EST = Bypass =
0 V, RPM Detect = sourcing 16 A
V(RPM)CL
2.4
2.5
2.7
V
Notes
18.
Dwell Control adjusts the reference voltage of Dwell Comparator.
19.
Dwell Control. sourcing 100 A.
20.
Dwell Control sinking 100 A.
21.
Dwell Control at 3.0 V; Internal Dwell Control transistor OFF.
22.
Dwell Control at 3.0 V; Internal Dwell Control transistor ON.
23.
Dwell Control at 7.0 V; Internal Dwell Control transistor OFF.
24.
Q53 and Q54 both ON; Measured with RPM Detect voltage at 0.5 V to reflect maximum source current capability. See Typical
25.
Q53 and Q54 both OFF; Measured with RPM Detect voltage at 0.5 V and 1.5 V to reflect maximum leakage current. Typical Applications
26.
Q53 and Q54 both ON; RPM Detect sinking 16 A. Typical Applications on page 10
Table 2. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V
≤ V
CC ≤ 18 V, - 40°C ≤ T
A ≤ 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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