參數(shù)資料
型號(hào): MCZ33797EK
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: Four Channel Squib Driver IC
中文描述: 四通道爆管驅(qū)動(dòng)IC
文件頁(yè)數(shù): 8/34頁(yè)
文件大?。?/td> 290K
代理商: MCZ33797EK
Analog Integrated Circuit Device Data
Freescale Semiconductor
8
33797
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
VFIRE1A / VFIRE2A Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXA pin, with High Side Safing Sensor Diagnostic active
I
RRE
260
350
400
μA
VFIRE1B / VFIRE2B Current During High Side Safing Sensor Diagnostics
(Command $CO)
Per VFIREXB pin, with High Side Safing Sensor Diagnostic active
I
RRE
22
32
55
μA
VFIRE1B / VFIRE2B Current During VFIRE Diagnostics (Command $C5)
Either VFIRE!B or VFIRE2B Diagnostic active
I
RRE
0.3
2.0
3.8
mA
VFIRE Quiescent Current - Total
All VFIRE pins measured together, with Diagnostics Off
I
QVFIRETOTAL
90
135
180
μA
Maximum Allowable External Capacitance to Ground
(9)
Per Squib pin SQB_LO and SQB_HI
CS
MAX
0.12
μF
Maximum Allowable External Resistance to Ground During Firing
(9)
VFIRE_RTN pin to Ground
RS
MAX
0.15
Individual FET Driver Thermal Shutdown
(9)
,
(10)
T
SD
160
190
C
FET Driver Thermal Shutdown Re-Enable Threshold After Drive Cool-down
(9)
,
(10)
T
REN
90
110
C
FET DRIVERS HIGH- AND LOW-SIDE DRIVER TRANSISTOR STATUS DIAGNOSTICS ($82, $83 COMMANDS)
Voltage Transistor Test Threshold for High-Side Driver Transistor
V
TRANTST1
5.5
6.0
6.5
V
High-Side Driver Current Limit During High-Side Driver Transistor
Diagnostics
15 V
V
VFIRE_XX
35 V
I
TRANTST1
2.0
10
50
mA
Voltage Transistor Test Threshold for Low-Side Driver Transistor
V
TRANTST2
1.0
1.4
2.0
V
Low-Side Driver Current Limit During Low-Side Driver Transistor
Diagnostics
15 V
V
VFIRE_XX
35 V
I
TRANTST2
2.0
10
50
mA
FEN INPUT PIN (FEN_1 AND FEN_2)
Internal Current Pull-Down
I
FEN
-25
-40
-50
μ
A
Logic Low Level
V
FEN(LO)
0.0
2.5
0.35 x V
DD
V
Fire Enable Pin Logic High Level
V
FEN(HI)
0.65 x V
DD
2.5
1.0 x V
DD
V
Notes
9
10
Guaranteed by design.
With a nominal squib load, the FET squib driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms.
The individual squib driver thermal shutdown will not affect other squib driver firing ON times. With a shorted squib load, the FET squib
driver will not enter thermal shutdown until the driver has been active for a minimum of 2.1 ms. When the thermal shutdown limit is
exceeded, the FET driver will turn OFF and the thermal status bit will be set to 1. The FET squib driver can be activated through the
arm ire command when the TEMP
RENABLE
(MIN) is reached (thermal shutdown status “0”). Nominal squib load: 2.15
± 0.15
.
Shorted squib load: 0.1
.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 4.75 V
V
DD
5.25 V; 7.0 V
V
VFIRE_XX
35 V; V
VDIAG_X
= V
VFIRE_XX
; FEN 1 = FEN 2
= V
DD
; R
R_LIMIT_X
= 10 k
±1%, R
R_DIAG
= 10 k
±1%, -40
°
C
T
A
+85
°
C, GND = 0 unless otherwise noted. Typical values
noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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