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參數(shù)資料
| 型號(hào)： | MCZ145010EGR2 |
| 廠商： | Freescale Semiconductor |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC SMOKE DETECT PHOTOELEC 16SOIC |
| 標(biāo)準(zhǔn)包裝： | 1,000 |
| 類型： | 煙霧探測(cè)器 |
| 輸入類型： | 光電 |
| 輸出類型： | 電壓 |
| 電流 - 電源： | 12µA |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC W |
| 包裝： | 帶卷 (TR) |
Sensors
6
Freescale Semiconductor
MC145010
Figure 3. AC Characteristics vs. Supply
Figure 4. AC Characteristics vs. Temperature
Figure 5. RC Component Variation Overtemperature
16
TEST
This input has an on-chip pull-down device and is used to manually invoke a test mode. The Push Button Test mode is
initiated by a high level at pin 16 (usually depression of a S.P.S.T. normally-open push button switch to VDD). After one
oscillator cycle, IRED pulses approximately every 336 ms, regardless of the presence of smoke. Additionally, the amplifier
gain is increased by automatic selection of C1. Therefore, the background reflections in the smoke chamber may be
interpreted as smoke, generating a simulated-smoke condition. After the second IRED pulse, a successful test activates
the horn-driver and I/O circuits. The active I/O allows remote signaling for system testing. When the Push Button Test
switch is released, the Test input returns to VSS due to the on-chip pull-down device. After one oscillator cycle, the amplifier
gain returns to normal, thereby removing the simulated-smoke condition. After two additional IRED pulses, less than a
second, the IC exits the alarm mode and returns to standby timing.
Table 4. Pin Description (Continued)
Pin
Symbol
Description
Pulse width of IRED
Period or pulse width
of other parameters
AC
Paramet
er
(Normalized
To
9.
0V
Value)
VDD, Power Supply Voltage (V)
1.02
0.98
0.96
1.00
1.04
6.0
7.0
8.0
9.0
10.0
12.0
11.0
Pulse width of IRED
Period or pulse width
of other parameters
AC
Paramet
er
(Normalized
To
25
°C
Value)
TA, Ambient Temperature (°C)
-10
0
10
20
40
50
60
1.02
1.01
0.99
0.98
1.00
30
VDD = 9.0 V
10 M
Carbon composition
100 k
Metal Film
1500 pF Dipped MICA
Compo
nent
V
alue
(No
rmalized
T
o
25
C
Va
lu
e)
°
TA, Ambient Temperature (°C)
-10
0
10
20
30
40
50
60
1.03
1.02
1.01
1.00
0.99
0.98
Note: These components were used to generate
Figure 3.
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