參數(shù)資料
型號(hào): MCT1413B
廠商: Motorola, Inc.
英文描述: High Voltage, High Current Darlington Transistor Array
中文描述: 高電壓,大電流達(dá)林頓晶體管陣列
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 52K
代理商: MCT1413B
MCT1413, B
2
MOTOROLA ANALOG IC DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Leakage Current
(VO = 50 V)
(VO = 50 V, TA = + 85
°
C)
(VO = 50 V, TA = – 40
°
C)
MCT1413, B
MCT1413, B
MCT1413B
ICEX
50
100
100
μ
A
Collector–Emitter Saturation Voltage
(IC = 350 mA, IB = 500
μ
A)
(IC = 200 mA, IB = 350
μ
A)
(IC = 100 mA, IB = 250
μ
A)
(IC = 350 mA, IB = 500
μ
A, TA = + 85
°
C, – 40
°
C)
(IC = 200 mA, IB = 350
μ
A, TA = + 85
°
C, – 40
°
C)
(IC = 100 mA, IB = 250
μ
A, TA = + 85
°
C, – 40
°
C)
MCT1413, B
MCT1413, B
MCT1413, B
MCT1413B
MCT1413B
MCT1413B
VCE(sat)
1.1
0.95
0.85
1.6
1.3
1.1
1.75
1.5
1.3
V
Input Current – ON Condition
(Vin = 3.85 V)
MCT1413, B
Iin
0.93
1.35
mA
Output Voltage – ON Condition
(Vin = 2.4 V, IC = 200 mA)
(Vin = 2.7 V, IC = 250 mA)
(Vin = 3.0 V, IC = 300 mA)
(Vin = 2.7 V, IC = 250 mA, TA = + 85
°
C, – 40
°
C)
(Vin = 3.0 V, IC = 300 mA, TA = + 85
°
C, – 40
°
C)
MCT1413, B
MCT1413, B
MCT1413, B
MCT1413B
MCT1413B
Vout
2.0
2.0
2.0
2.0
2.0
V
Output Current – OFF Condition
(Iin = 50
μ
A, Vout = 5.0 V)
(Iin = 50
μ
A, Vout = 5.0 V, TA = + 85
°
C)
(Iin = 50
μ
A, Vout = 5.0 V, TA = – 40
°
C)
MCT1413, B
MCT1413, B
MCT1413B
Iout
100
500
500
μ
A
Clamp Diode Leakage Current
(VR = 50 V)
(VR = 50 V, TA = + 85
°
C)
(VR = 50 V, TA = – 40
°
C)
MCT1413, B
MCT1413, B
MCT1413B
IR
50
100
100
μ
A
Clamp Diode Forward Voltage
(IF = 350 mA)
(IF = 350 mA, TA = + 85
°
C, – 40
°
C)
MCT1413, B
MCT1413B
VF
1.5
2.0
2.0
V
Figure 1. Representative Schematic Diagram
(1/7 MCT1413, B)
7.2 k
3.0 k
Pin 9
2.7 k
This device contains 14 active transistors.
NOTE:
Dotted lines indicate parasitic diodes.
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