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參數(shù)資料
| 型號： | MCRF200IWF08D |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 125 kHz microID⑩ Passive RFID Device |
| 中文描述： | 125千赫microID⑩無源RFID器件 |
| 文件頁數(shù)： | 3/24頁 |
| 文件大小： | 294K |
| 代理商： | MCRF200IWF08D |
2003 Microchip Technology Inc.
DS21219H-page 3
MCRF200
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
()
Storage temperature ..............................................................................................................................- 65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
Maximum current into coil pads ..............................................................................................................................50 mA
TABLE 1-1:
AC AND DC CHARACTERISTICS
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
All parameters apply across the
specified operating ranges unless
otherwise noted.
Industrial (I): T
A
= -40°C to +85°C
Parameter
Sym
Min
Typ
Max
Units
Conditions
Clock frequency
Contactless programming time
Data retention
Coil current (Dynamic)
Operating current
Turn-on-voltage (Dynamic) for
modulation
F
CLK
T
WC
100
—
200
—
—
10
2
—
—
2
—
50
5
—
—
2
400
—
—
kHz
sec
Years
μ
A
μ
A
V
PP
V
DC
pF
For all 128-bit array
at 25°C
I
CD
I
DD
V
A
V
B
V
CC
C
IN
V
CC
= 2V
—
—
—
Input Capacitance
Between V
A
and V
B
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