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參數(shù)資料
| 型號： | MCRF200I1M14D |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | CONNECTOR, I/O, SMT, PLUG, 19WAY; Connector type:Rectangular; Gender:Plug; Ways, No. of:19; Material, contact:Copper Alloy; Plating, contact:Gold; Series:9157 MOBO; Connector insert type:Male; Contact style:Pin; Mounting type:PCB; RoHS Compliant: Yes |
| 中文描述： | 125千赫microID⑩無源RFID器件 |
| 文件頁數(shù)： | 12/24頁 |
| 文件大小： | 294K |
| 代理商： | MCRF200I1M14D |
MCRF200
DS21219H-page 12
2003 Microchip Technology Inc.
TABLE 5-3:
DIE MECHANICAL DIMENSIONS
TABLE 5-4:
WAFER MECHANICAL SPECIFICATIONS
Specifications
Min
Typ
Max
Unit
Comments
Bond pad opening
—
—
—
—
—
—
—
—
—
3.5 x 3.5
89 x 89
7
177.8
11
279.4
—
—
0.9050
—
—
—
—
—
—
±1
mil
μ
m
mil
μ
m
mil
μ
m
mil
μ
m
μ
m
Note 1, Note 2
Die backgrind thickness
Sawed 6” wafer on frame
(option = WF)
Note 3
Unsawed wafer
(option = W)
Note 3
Die backgrind thickness tolerance
±25.4
—
Die passivation thickness (multilayer)
Die Size:
Die size X*Y before saw (step size)
Die size X*Y after saw
Note 1:
The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at
least 0.1 mil.
2:
Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.
3:
As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as
thick as the application will allow.
4:
The Die Passivation thickness (0.905
μ
m) can vary by device depending on the mask set used. The
passivation is formed by:
-Layer 1: Oxide (undoped oxide 0.135
μ
m)
-Layer 2: PSG (doped oxide, 0.43
μ
m)
-Layer 3: Oxynitride (top layer, 0.34
μ
m)
5:
The conversion rate is 25.4
μ
m/mil.
Note 4
—
—
44.15 x 68.44
42.58 x 66.87
—
—
mil
mil
—
—
Notice:
Extreme care is urged in the handling and assembly of die products since they are susceptible to
mechanical and electrostatic damage.
Specifications
Min
Typ
Max
Unit
Comments
Wafer Diameter
Die separation line width
Dice per wafer
Batch size
—
—
—
—
8
—
—
—
—
inch
μ
m
die
wafer
150 mm
80
14,000
24
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