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參數(shù)資料
| 型號： | MCR718T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) |
| 中文描述： | 4 A, 600 V, SCR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 68K |
| 代理商： | MCR718T4 |
MCR716, MCR718
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
R
JA
3.0
°
C/W
Thermal Resistance, JunctiontoAmbient (Note 2)
80
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current; R
GK
= 1 k (Note 3)
(V
AK
= Rated V
DRM
or V
RRM
)
T
C
= 25
°
C
T
C
= 110
°
C
I
DRM
I
RRM
10
200
A
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage
(I
GR
= 10 A)
V
RGM
10
12.5
18
V
Peak Reverse Gate Blocking Current
(V
GR
= 10 V)
I
RGM
1.2
A
Peak Forward OnState Voltage (Note 4)
(I
TM
= 5.0 A Peak)
(I
TM
= 8.2 A Peak)
V
TM
1.3
1.5
1.5
2.2
V
Gate Trigger Current (Continuous dc) (Note 5)
(V
D
= 12 Vdc, R
L
= 30 Ohms)
T
C
= 25
°
C
T
C
= 40
°
C
I
GT
1.0
25
75
300
A
Gate Trigger Voltage (Continuous dc) (Note 5)
(V
D
= 12 Vdc, R
L
= 30 Ohms)
T
C
= 25
°
C
T
C
= 40
°
C
T
C
= 110
°
C
V
GT
0.3
0.2
0.55
0.8
1.0
V
Holding Current (Note 3)
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
T
C
= 25
°
C
T
C
= 40
°
C
I
H
0.4
1.0
5.0
10
mA
Latching Current (Note 3)
(V
D
= 12 Vdc, I
G
= 2.0 mA, T
C
= 25
°
C)
(V
D
= 12 Vdc, I
G
= 2.0 mA, T
C
= 40
°
C)
I
L
5.0
10
mA
Total Turn-On Time
(Source Voltage = 12 V, R
S
= 6 k , I
T
= 8 A(pk), R
GK
= 1 k )
(V
D
= Rated V
DRM
, Rise Time = 20 ns, Pulse Width = 10 s)
t
gt
2.0
5.0
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(V
D
= 0.67 x Rated V
DRM
, R
GK
= 1 k , Exponential Waveform,
T
J
= 110
°
C)
dv/dt
5.0
10
V/ s
Repetitive Critical Rate of Rise of OnState Current
(f = 60 Hz, I
PK
= 30 A, PW = 100 s, dIG/dt = 1 A/ s)
2. Case 369C, when surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or R
GK
= 1 k . Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test: Pulse Width
≤
2 ms, Duty Cycle
≤
2%.
5. R
GK
current not included in measurements.
di/dt
100
A/ s
ORDERING INFORMATION
Device
Package
Shipping
MCR716T4
DPAK
16 mm Tape & Reel (2.5 k / Reel)
MCR718T4
DPAK
16 mm Tape & Reel (2.5 k / Reel)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR718T4G | 功能描述:SCR 600V 4A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR72 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
| MCR72_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR72-002 | 制造商:Motorola Inc 功能描述: |
| MCR72-003 | 功能描述:SCR 100V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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