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參數(shù)資料
| 型號(hào)： | MCR69-2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | SILICON CONTROLLED RECTIFIERS |
| 中文描述： | 25 A, 50 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 76K |
| 代理商： | MCR69-2 |
MCR69–2, MCR69–3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
TL
1.5
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25
°
C
TJ = 125
°
C
IDRM, IRRM
—
—
—
—
10
2.0
μ
A
mA
ON CHARACTERISTICS
Peak Forward On-State Voltage
(ITM = 50 A)(1)
(ITM = 750 A, tw = 1 ms)(2)
VTM
—
—
—
6.0
1.8
—
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100
)
IGT
2.0
7.0
30
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
)
VGT
—
0.65
1.5
Volts
Gate Non–Trigger Voltage
(VD = 12 Vdc, RL = 100
, TJ = 125
°
C)
VGD
0.2
0.40
—
Volts
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
IH
3.0
15
50
mA
Latching Current
(VD = 12 Vdc, IG = 150 mA)
Gate Controlled Turn-On Time(3)
(VD = Rated VDRM, IG = 150 mA)
(ITM = 50 A Peak)
DYNAMIC CHARACTERISTICS
IL
—
—
60
mA
tgt
—
1.0
—
μ
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Gate Open, Exponential Waveform, TJ = 125
°
C)
dv/dt
10
—
—
V/
μ
s
Critical Rate-of-Rise of On-State Current
IG = 150 mA
(1) Pulse duration
300
μ
s, duty cycle
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined
as 5 time constants of an exponentially decaying current pulse.
(3) The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance.
TJ = 125
°
C
di/dt
—
—
100
A/
μ
s
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR69-2G | 功能描述:SCR 50V 25A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR69-3 | 制造商:Motorola Inc 功能描述: |
| MCR69-3G | 功能描述:SCR 100V 25A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR69-3G | 制造商:ON Semiconductor 功能描述:SCR Thyristor |
| MCR-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Fuse |
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