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參數(shù)資料
| 型號(hào)： | MCR265-9 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Thyristors |
| 中文描述： | 晶閘管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | MCR265-9 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Silicon Controlled Rectifiers
. . . designed for inverse parallel SCR output devices for solid state relays, welders,
battery chargers, motor controls or applications requiring high surge operation.
Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters
550 Amperes Surge Capability
Blocking Voltage to 800 Volts
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125
°
C, Gate Open)
MCR265-2
MCR265-4
MCR265-6
MCR265-8
MCR265-10
VDRM
VRRM
50
200
400
600
800
Volts
Forward Current (TC = 70
°
C)
(All Conduction Angles)
IT(RMS)
IT(AV)
55
35
Amps
Peak Non-repetitive Surge Current — 8.3 ms
(1/2 Cycle, Sine Wave)
ITSM
550
Amps
Forward Peak Gate Power
PGM
PG(AV)
IGM
20
Watts
Forward Average Gate Power
0.5
Watt
Forward Peak Gate Current
(300
μ
s, 120 PPS)
2
Amps
Operating Junction Temperature Range
TJ
Tstg
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when
the device is to be used at high sustained currents.
Order this document
by MCR265-2/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A-04
(TO-220AB)
STYLE 3
SCRs
55 AMPERES RMS
50 thru 800 VOLTS
K
G
A
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