參數(shù)資料
型號: MCR264-4
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Silicon Controlled Rectifier Reverse Blocking Thyristor(40A,400V硅控整流器反向截止晶閘管)
中文描述: 40 A, 200 V, SCR, TO-220AB
封裝: CASE 221A-07, 3 PIN
文件頁數(shù): 2/8頁
文件大小: 73K
代理商: MCR264-4
MCR264–4, MCR264–6, MCR264–8
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
TL
1.0
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25
°
C
TJ = 125
°
C
IDRM, IRRM
10
2.0
μ
A
mA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1)
(ITM = 80 A)
VTM
1.4
2.0
Volts
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms, TC = – 40
°
C)
IGT
15
30
50
90
mA
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
VGT
1.0
1.5
Volts
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125
°
C)
VGD
0.2
Volts
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
30
60
mA
Turn-On Time
(ITM = 40 A, IGT = 60 mAdc)
DYNAMIC CHARACTERISTICS
tgt
1.5
μ
s
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%.
dv/dt
50
V/
μ
s
相關PDF資料
PDF描述
MCR264-6 Silicon Controlled Rectifier Reverse Blocking Thyristor(40A,600V硅控整流器反向截止晶閘管)
MCR264-8 Silicon Controlled Rectifier Reverse Blocking Thyristor(40A,800V硅控整流器反向截止晶閘管)
MCR265-10 Silicon Controlled Rectifier Reverse Blocking Thyristor(55A,800V硅控整流器反向截止晶閘管)
MCR265-4 Silicon Controlled Rectifier Reverse Blocking Thyristor(55A,200V硅控整流器反向截止晶閘管)
MCR265-6 Silicon Controlled Rectifier Reverse Blocking Thyristor(55A,400V硅控整流器反向截止晶閘管)
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