參數(shù)資料
型號: MCR16N
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: Silicon Controlled Rectifiers(可控硅整流管)
中文描述: 16 A, 800 V, SCR, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 61K
代理商: MCR16N
MCR16N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
1.5
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
T
J
= 25
°
C
T
J
= 125
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak Forward OnState Voltage (Note 2)
(I
TM
= 32 A)
V
TM
1.7
V
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100 )
I
GT
2.0
10
20
mA
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100 )
V
GT
0.5
0.65
1.0
V
Hold Current
(Anode Voltage = 12 V, Initiating Current = 200 mA, Gate Open)
I
H
4.0
25
40
mA
Latch Current
(V
D
= 12 V, Ig = 200 mA)
I
L
30
60
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125
°
C)
dv/dt
100
300
V/ s
Critical Rate of Rise of OnState Current
(I
PK
= 50 A, Pw = 30 s, diG/dt = 1 A/ sec, Igt = 50 mA)
2. Indicates Pulse Test: Pulse Width
di/dt
50
A/ s
2.0 ms, Duty Cycle
2%.
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
(off state)
I
RRM
at V
RRM
相關(guān)PDF資料
PDF描述
MCR22-6 Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
MCR22-8 Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
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