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參數(shù)資料
| 型號： | MCR101-X-XX-T92-K |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| 中文描述： | 跳頻龍運(yùn)靈敏柵極可控硅整流裝置，反向阻斷晶閘管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 114K |
| 代理商： | MCR101-X-XX-T92-K |
MCR101
SCR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R301-009,C
ABS OLUT E MAX IMUM RAT INGS
PARAMETER
SYMBOL
RATINGS
200
400
600
0.8
UNIT
MCR101-4
MCR101-6
MCR101-8
Peak Repetitive Off-State Voltage(note)
(T
J
=-40 to 110
°
C, Sine Wave, 50 to 60Hz; Gate
Open)
On-Sate RMS Current (Tc=80
°
C) 180
°
Condition Angles
Peak Non-Repetitive Surge Current
(1/2 cycle, Sine Wave, 60Hz, T
J
=25
°
C)
Circuit Fusing Considerations (t=8.3 ms)
Forward Peak Gate Power (T
A
=25
°
C, Pulse Width
≤
1.0
μ
s)
Forward Average Gate Power (T
A
=25
°
C, t=8.3ms)
Peak Gate Current – Forward (T
A
=25
°
C, Pulse Width
≤
1.0
μ
s)
Peak Gate Voltage – Reverse (T
A
=25
°
C, Pulse Width
≤
1.0
μ
s)
Operating Junction Temperature @ Rated V
RRM
and V
DRM
Storage Temperature
Note: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
V
DRM
,V
RRM
V
I
T(RMS)
A
I
TSM
10
A
I
2
t
P
GM
P
G(AV)
I
GM
V
GRM
T
J
T
STG
0.415
0.1
0.1
1
5
-40 ~ +110
-40 ~ +150
A
2
s
W
W
A
V
°
C
°
C
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JC
θ
JA
RATING
75
200
UNIT
°
C/W
°
C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECT RICAL CHARACT ERIS T ICS
(T
J
=25
°
C, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Peak Forward or Reverse
Blocking Current
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note1)
Gate Trigger Current (Continuous
dc)(note2)
Tc=25
°
C
Tc=125
°
C
10
100
I
DRM
, I
RRM
V
D
=Rated V
DRM
and V
RRM
; R
GK
=1k
μ
A
V
TM
I
TM
=1A Peak @ T
A
=25
°
C
1.7
V
I
GT
V
AK
=7Vdc, R
L
=100
, T
C
=25
°
C
40
200
μ
A
Tc=25
°
C
Tc=-40
°
C
Tc=25
°
C
Tc=-40
°
C
Tc=25
°
C
0.5
0.6
0.62
5
10
10
15
0.8
1.2
Holding Current (note 3)
I
H
V
AK
=7Vdc, initiating current=20mA
mA
Latch Current
I
L
V
AK
=7V, Ig=200
μ
A
mA
Gate Trigger Current
(continuous dc) (Note 2) Tc=-40
°
C
DYNAMIC CHARACTERISTICS
V
GT
V
AK
=7Vdc, R
L
=100
V
Critical Rate of Rise of Off-State Voltage
dV/dt
V
D
=Rated V
DRM
, Exponential
Waveform, R
GK
=1000
, T
J
=110
°
C
I
PK
=20A Pw=10
μ
sec
diG/dt=1A/
μ
sec, Igt=20mA
20
35
V/
μ
s
Critical Rate of Rise of On-State Current
di/dt
50
A/
μ
s
Notes: 1. Indicates Pulse Test Width
≤
1.0ms, duty cycle
≤
1%
2. R
GK
=1000
included in measurement.
3. Does not include R
GK
in measurement.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCR101-8-AC-T92-B | FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| MCR101-8-AD-T92-B | FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| MCR101-8-B-T92-B | FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| MCR101-8-C-T92-B | FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| MCR101L-4-AA-T92-B | FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
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