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參數(shù)資料
| 型號： | MCR101-8 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | CHOPPER STABILIZED SWITCH W/TIN PLATING |
| 中文描述： | 敏感柵硅控整流器反向阻斷晶閘管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 105K |
| 代理商： | MCR101-8 |
UTC MCR101
SCR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-009,B
PARAMETER
SYMBOL
I
2
t
MAX
0.415
UNIT
A
2
s
Circuit Fusing Considerations
(t=8.3 ms)
Forward Peak Gate Power
(T
A
=25
°
C, Pulse Width
≤
1.0
μ
s)
Forward Average Gate Power
(T
A
=25
°
C, t=8.3ms)
Peak Gate Current – Forward
(T
A
=25
°
C, Pulse Width
≤
1.0
μ
s)
Peak Gate Voltage – Reverse
(T
A
=25
°
C, Pulse Width
≤
1.0
μ
s)
Operating Junction Temperature Range @ Rated V
RRM
and
V
DRM
Storage Temperature Range
Note: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the
devices are exceeded.
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise stated)
PARAMETER
TEST CONDITION
OFF CHARACTERISTICS
Peak Forward or Reverse Blocking
Current Tc=25
°
C
Tc=125
°
C
ON CHARACTERISTICS
Peak Forward On-State Voltage
(Note1)
Gate Trigger Current (Continuous
dc)(note2)
Holding Current (note 3) Tc=25
°
C
Tc=-40
°
C
Latch Current Tc=25
°
C
Tc=-40
°
C
Gate Trigger Current
(continuous dc) (Note 2) Tc=25
°
C
Tc=-40
°
C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State
Voltage
Waveform, R
GK
=1000
, T
J
=110
°
C
Critical Rate of Rise of On-State
Current
Notes: 1. Indicates Pulse Test Width
≤
1.0ms, duty cycle
≤
1%
2. R
GK
=1000
included in measurement.
3. Does not include R
GK
in measurement.
P
GM
0.1
W
P
G(AV)
0.1
W
I
GM
1
A
V
GRM
5
V
T
J
-40 to +110
°
C
Tstg
-40 to +150
°
C
SYMBOL
MIN TYP MAX UNIT
V
D
=Rated V
DRM
and V
RRM
; R
GK
=1k
I
DRM
, I
RRM
10
100
μ
A
μ
A
I
TM
=1A Peak @ T
A
=25
°
C
V
TM
1.7
V
V
AK
=7Vdc, R
L
=100
, T
C
=25
°
C
I
GT
40
200
μ
A
V
AK
=7Vdc, initiating current=20mA
I
H
0.5
5
10
10
15
0.8
1.2
mA
V
AK
=7V, Ig=200
μ
A
I
L
0.6
mA
V
AK
=7Vdc, R
L
=100
V
GT
0.62
V
V
D
=Rated V
DRM
, Exponential
dV/dt
20
35
V/
μ
s
I
PK
=20A; Pw=10
μ
sec;
diG/dt=1A/
μ
sec, Igt=20mA
di/dt
50
A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR101-8-AA-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| MCR101-8-AB-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| MCR101-8-AC-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| MCR101-8-AD-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
| MCR101-8-B-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS |
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