參數資料
型號: MCP6V26T-E/SN
廠商: Microchip Technology
文件頁數: 47/50頁
文件大?。?/td> 0K
描述: IC OPAMP AUTO-ZERO SGL 8SOIC
標準包裝: 3,300
放大器類型: 自動調零
電路數: 1
輸出類型: 滿擺幅
轉換速率: 1 V/µs
增益帶寬積: 2MHz
電流 - 輸入偏壓: 7pA
電壓 - 輸入偏移: 2µV
電流 - 電源: 620µA
電流 - 輸出 / 通道: 22mA
電壓 - 電源,單路/雙路(±): 2.3 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應商設備封裝: 8-SOICN
包裝: 帶卷 (TR)
MCP6V26/7/8
DS25007B-page 6
2011 Microchip Technology Inc.
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.3V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT =VDD/2, VL =VDD/2, RL = 10 kW to VL, CL = 60 pF, and CS = GND (refer to Figure 1-5 and
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Pull-Down Resistor (MCP6V28)
CS Pull-Down Resistor
RPD
35
M
Ω
CS Low Specifications (MCP6V28)
CS Logic Threshold, Low
VIL
VSS
—0.3VDD
V
CS Input Current, Low
ICSL
—5
pA
CS = VSS
CS High Specifications (MCP6V28)
CS Logic Threshold, High
VIH
0.7VDD
—VDD
V
CS Input Current, High
ICSH
—VDD/RPD
—pA
CS = VDD
CS Input High,
GND Current per amplifier
ISS
—-0.4
A
CS = VDD, VDD = 2.3V
ISS
—-1
A
CS = VDD, VDD = 5.5V
Amplifier Output Leakage,
CS High
IO_LEAK
—20
pA
CS = VDD
CS Dynamic Specifications (MCP6V28)
CS Low to Amplifier Output On
Turn-on Time
tON
—4
50
s
CS Low = VSS+0.3 V, G = +1 V/V,
VOUT = 0.9 VDD/2
CS High to Amplifier Output
High-Z
tOFF
—1
s
CS High = VDD – 0.3 V, G = +1 V/V,
VOUT = 0.1 VDD/2
Internal Hysteresis
VHYST
—0.2
V
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.3V to +5.5V, VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TA
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 8L-4x4 DFN
θJA
—48
°C/W (Note 2)
Thermal Resistance, 8L-MSOP
θJA
—211
°C/W
Thermal Resistance, 8L-SOIC
θJA
150
°C/W
Thermal Resistance, 8L-2x3 TDFN
θJA
—53
°C/W (Note 2)
Note 1:
Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).
2:
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
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