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鍙冩暩璩囨枡
| 鍨嬭櫉锛� | MCP6V26-E/SN |
| 寤犲晢锛� | Microchip Technology |
| 鏂囦欢闋佹暩锛� | 11/50闋� |
| 鏂囦欢澶�?銆�?/td> | 0K |
| 鎻忚堪锛� | IC OPAMP AUTO-ZERO SGL 8SOIC |
| 妯欐簴鍖呰锛� | 100 |
| 鏀惧ぇ鍣ㄩ鍨嬶細 | 鑷嫊瑾块浂 |
| 闆昏矾鏁革細 | 1 |
| 杓稿嚭椤炲瀷锛� | 婊挎摵骞� |
| 杞夋彌閫熺巼锛� | 1 V/µs |
| 澧炵泭甯跺绌嶏細 | 2MHz |
| 闆绘祦 - 杓稿叆鍋忓锛� | 7pA |
| 闆诲 - 杓稿叆鍋忕Щ锛� | 2µV |
| 闆绘祦 - 闆绘簮锛� | 620µA |
| 闆绘祦 - 杓稿嚭 / 閫氶亾锛� | 22mA |
| 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� | 2.3 V ~ 5.5 V |
| 宸ヤ綔婧害锛� | -40°C ~ 125°C |
| 瀹夎椤炲瀷锛� | 琛ㄩ潰璨艰 |
| 灏佽/澶栨锛� | 8-SOIC锛�0.154"锛�3.90mm 瀵級 |
| 渚涙噳鍟嗚ō鍌欏皝瑁濓細 | 8-SOICN |
| 鍖呰锛� | 绠′欢 |
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2011 Microchip Technology Inc.
DS25007B-page 19
MCP6V26/7/8
Note: Unless otherwise indicated, TA =+25掳C, VDD = +2.3V to 5.5V, VSS = GND, VCM =VDD/3, VOUT =VDD/2,
VL =VDD/2, RL =10k惟 to VL, CL = 60 pF, and CS = GND.
FIGURE 2-57:
Chip Select Relative Logic
Thresholds vs. Ambient Temperature.
FIGURE 2-58:
Chip Select Hysteresis.
FIGURE 2-59:
Chip Select Turn On Time
vs. Ambient Temperature.
FIGURE 2-60:
Chip Select鈥檚 Pull-down
Resistor (RPD) vs. Ambient Temperature.
FIGURE 2-61:
Quiescent Current in
Shutdown vs. Power Supply Voltage.
30%
35%
40%
45%
50%
55%
60%
65%
70%
-50
-25
0
25
50
75
100
125
Relative
Chip
Select
Logic
Levels;
Low
and
High
(V/V)
Ambient Temperature (掳C)
V
IH/VDD
V
IL/VDD
V
DD = 5.5V
V
DD = 2.3V
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
-50
-25
0
25
50
75
100
125
Chip
Select
Hy
steresis
(V)
Ambient Temperature (掳C)
V
DD = 5.5V
V
DD = 2.3V
0
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
Chip
Select
T
u
rn
On
T
ime
(渭s)
Ambient Temperature (掳C)
V
DD = 5.5V
V
DD = 2.3V
0
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
Pull-dow
n
Resistor
(M
)
Ambient Temperature (掳C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Pow
e
rSupply
Current
(渭A)
Power Supply Voltage (V)
CS = V
DD
Representative Part
+125掳C
+85掳C
+25掳C
-40掳C
鐩搁棞PDF璩囨枡 |
PDF鎻忚堪 |
|---|---|
| MCP6V26-E/MS | IC OPAMP AUTO-ZERO SGL 8MSOP |
| PBC27DFDN | CONN HEADER .100 DUAL STR 54POS |
| PEC20DAHN | CONN HEADER .100 DUAL STR 40POS |
| 5HT 8-R | FUSE SLOW 250VAC 8A 5X20 |
| RW1S0BAR047FET | RES POWER .047 OHM 1W 1% SMT |
鐩搁棞浠ｇ悊鍟�/鎶€琛撳弮鏁� |
鍙冩暩鎻忚堪 |
|---|---|
| MCP6V26T-E/MNY | 鍔熻兘鎻忚堪:閬嬬畻鏀惧ぇ鍣� - 閬嬫斁 Single, Auto-Zero Op Amp, E Temp RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁搁噺:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁滃劅闆诲:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰ㄦ牸:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞夋彌閫熷害:0.89 V/us 闂滈枆:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel |
| MCP6V26T-E/MS | 鍔熻兘鎻忚堪:閬嬬畻鏀惧ぇ鍣� - 閬嬫斁 Single, Auto-Zero Op Amp, E Temp RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁搁噺:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁滃劅闆诲:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰ㄦ牸:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞夋彌閫熷害:0.89 V/us 闂滈枆:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel |
| MCP6V26T-E/SN | 鍔熻兘鎻忚堪:閬嬬畻鏀惧ぇ鍣� - 閬嬫斁 Single, Auto-Zero Op Amp, E Temp RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁搁噺:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁滃劅闆诲:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰ㄦ牸:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞夋彌閫熷害:0.89 V/us 闂滈枆:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel |
| MCP6V27-E/MD | 鍔熻兘鎻忚堪:閬嬬畻鏀惧ぇ鍣� - 閬嬫斁 620 uA, 2 MHz Auto-Zeroed Op Amps RoHS:鍚� 鍒堕€犲晢:STMicroelectronics 閫氶亾鏁搁噺:4 鍏辨ā鎶戝埗姣旓紙鏈€灏忓€硷級:63 dB 杓稿叆瑁滃劅闆诲:1 mV 杓稿叆鍋忔祦锛堟渶澶у€硷級:10 pA 宸ヤ綔闆绘簮闆诲:2.7 V to 5.5 V 瀹夎棰ㄦ牸:SMD/SMT 灏佽 / 绠遍珨:QFN-16 杞夋彌閫熷害:0.89 V/us 闂滈枆:No 杓稿嚭闆绘祦:55 mA 鏈€澶у伐浣滄韩搴�:+ 125 C 灏佽:Reel |
| MCP6V27-E/MD | 鍒堕€犲晢:Microchip Technology Inc 鍔熻兘鎻忚堪:; Peak Reflow Compatible (260 C):Yes; Le |
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