參數(shù)資料
型號: MCP6S22
廠商: Microchip Technology Inc.
英文描述: Single-Ended, Rail-to-Rail I/O, Low Gain PGA
中文描述: 單端,軌至軌I / O,低增益美國PGA
文件頁數(shù): 9/43頁
文件大小: 880K
代理商: MCP6S22
2003 Microchip Technology Inc.
DS21117A-page 9
MCP6S21/2/6/8
2.0
TYPICAL PERFORMANCE CURVES
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +5.0V, V
SS
= GND, V
REF
= V
SS
, G= +1 V/V,
Input = CH0 = (0.3V)/G, CH1 to CH7 = 0.3V, R
L
= 10 k
to V
DD
/2, and C
L
= 60 pF.
FIGURE 2-1:
DC Gain Error, G = +1.
FIGURE 2-2:
DC Gain Error, G
+2.
FIGURE 2-3:
Ladder Resistance Drift.
FIGURE 2-4:
DC Gain Drift, G = +1.
FIGURE 2-5:
DC Gain Drift, G
+2.
FIGURE 2-6:
V
DD
= 4.0V.
Input Offset Voltage,
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
-
-
-
-
-
-
-
-
-
-
0
0
DC Gain Error (%)
P
420 Samples
G = +1
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
-
-
-
-
-
0
0
0
0
0
0
DC Gain Error (%)
P
420 Samples
G
t
+2
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
0
0
0
0
0
0
0
0
0
Ladder Resistance Drift (%/°C)
P
420 Samples
T
A
= -40 to +125°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
-
-
-
-
-
-
0
0
0
0
0
0
0
DC Gain Drift (%/°C)
P
420 Samples
G = +1
T
A
= -40 to +125°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
-
-
-
-
-
0
0
0
0
0
0
DC Gain Drift (%/°C)
P
420 Samples
G
t
+2
T
A
= -40 to +125°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
-
-
-
-
-
-
0
4
8
1
1
2
2
Input Offset Voltage (μV)
P
360 Samples
V
DD
= 4.0 V
G = +1
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