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鍙冩暩(sh霉)璩囨枡
| 鍨嬭櫉锛� | MCP6032T-E/MS |
| 寤犲晢锛� | Microchip Technology |
| 鏂囦欢闋佹暩(sh霉)锛� | 12/34闋� |
| 鏂囦欢澶�?銆�?/td> | 0K |
| 鎻忚堪锛� | IC OPAMP DUAL 1.8V 8MSOP |
| 妯�(bi膩o)婧�(zh菙n)鍖呰锛� | 2,500 |
| 鏀惧ぇ鍣ㄩ鍨嬶細 | 閫氱敤 |
| 闆昏矾鏁�(sh霉)锛� | 2 |
| 杓稿嚭椤炲瀷锛� | 婊挎摵骞� |
| 杞�(zhu菐n)鎻涢€熺巼锛� | 0.004 V/µs |
| 澧炵泭甯跺绌嶏細 | 10kHz |
| 闆绘祦 - 杓稿叆鍋忓锛� | 1pA |
| 闆诲 - 杓稿叆鍋忕Щ锛� | 150µV |
| 闆绘祦 - 闆绘簮锛� | 0.9µA |
| 闆绘祦 - 杓稿嚭 / 閫氶亾锛� | 23mA |
| 闆诲 - 闆绘簮锛屽柈璺�/闆欒矾(±)锛� | 1.8 V ~ 5.5 V |
| 宸ヤ綔婧害锛� | -40°C ~ 125°C |
| 瀹夎椤炲瀷锛� | 琛ㄩ潰璨艰 |
| 灏佽/澶栨锛� | 8-TSSOP锛�8-MSOP锛�0.118"锛�3.00mm 瀵級 |
| 渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 | 8-MSOP |
| 鍖呰锛� | 甯跺嵎 (TR) |
| 鍏跺畠鍚嶇ū锛� | MCP6032T-E/MSTR |
绗�1闋�绗�2闋�绗�3闋�绗�4闋�绗�5闋�绗�6闋�绗�7闋�绗�8闋�绗�9闋�绗�10闋�绗�11闋�鐣�(d膩ng)鍓嶇12闋�绗�13闋�绗�14闋�绗�15闋�绗�16闋�绗�17闋�绗�18闋�绗�19闋�绗�20闋�绗�21闋�绗�22闋�绗�23闋�绗�24闋�绗�25闋�绗�26闋�绗�27闋�绗�28闋�绗�29闋�绗�30闋�绗�31闋�绗�32闋�绗�33闋�绗�34闋�
MCP6031/2/3/4
DS22041B-page 2
2008 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
VDD 鈥� VSS ........................................................................7.0V
Current at Input Pins .....................................................卤2 mA
Analog Inputs (VIN+, VIN-) .......... VSS 鈥� 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS 鈥� 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD 鈥� VSS|
Output Short-Circuit Current .................................continuous
Current at Output and Supply Pins ............................卤30 mA
Storage Temperature.....................................-65掳C to +150掳C
Maximum Junction Temperature (TJ) ..........................+150掳C
ESD protection on all pins (HBM; MM)
................ 鈮� 4 kV; 400V
Notice: Stresses above those listed under 鈥淎bsolute
Maximum Ratings鈥� may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, V
DD = +1.8V to +5.5V, VSS=GND, TA= +25掳C, VCM = VDD/2,
VOUT 鈮� VDD/2, VL = VDD/2, RL = 1 M惟 to VL and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
VOS
-150
鈥�
+150
V
VDD = 3.0V, VCM = VDD/3
Input Offset Drift with Temperature
螖V
OS/螖TA
鈥�
卤3.0
鈥�
V/掳C TA= -40掳C to +125掳C,
VDD = 3.0V, VCM = VDD/3
Power Supply Rejection Ratio
PSRR
70
88
鈥�
dB
VCM = VSS
Input Bias Current and Impedance
Input Bias Current
IB
鈥�
卤1.0
100
pA
IB
鈥�60
鈥�
pA
TA = +85掳C
IB
鈥�
2000
5000
pA
TA = +125掳C
Input Offset Current
IOS
鈥�
卤1.0
鈥�
pA
Common Mode Input Impedance
ZCM
鈥�1013||6
鈥�
惟||pF
Differential Input Impedance
ZDIFF
鈥�1013||6
鈥�
惟||pF
Common Mode
Common Mode Input Voltage
Range
VCMR
VSS 0.3
鈥�
VDD + 0.3
V
Common Mode Rejection Ratio
CMRR
70
95
鈥�
dB
VCM = -0.3V to 2.1V,
VDD = 1.8V
72
93
鈥�
dB
VCM = -0.3V to 5.8V,
VDD = 5.5V
70
89
鈥�
dB
VCM = 2.75V to 5.8V,
VDD = 5.5V
72
93
鈥�
dB
VCM = -0.3V to 2.75V,
VDD = 5.5V
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
AOL
95
115
鈥�
dB
0.2V < VOUT < (VDD 鈥� 0.2V)
RL = 50 k惟 to VL
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