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參數(shù)資料
| 型號(hào)： | MCP602T-ECH |
| 廠商： | Microchip Technology Inc. |
| 英文描述： | 2.7V to 6.0V Single Supply CMOS Op Amps |
| 中文描述： | 2.7V至6.0V的單電源CMOS運(yùn)算放大器 |
| 文件頁(yè)數(shù)： | 3/34頁(yè) |
| 文件大?。?/td> | 460K |
| 代理商： | MCP602T-ECH |
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2007 Microchip Technology Inc.
DS21314G-page 3
MCP601/1R/2/3/4
AC CHARACTERISTICS
MCP603 CHIP SELECT (CS) CHARACTERISTICS
FIGURE 1-1:
Timing Diagram.
MCP603 Chip Select (CS)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.7V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, and R
L
= 100 k
Ω
to V
L
, C
L
= 50 pF, and CS is tied low. (Refer to
Figure 1-2
and
Figure 1-3
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Frequency Response
Gain Bandwidth Product
Phase Margin
Step Response
Slew Rate
Settling Time (0.01%)
GBWP
PM
—
—
2.8
50
—
—
MHz
°
G = +1 V/V
SR
t
settle
—
—
2.3
4.5
—
—
V/μs
μs
G = +1 V/V
G = +1 V/V, 3.8V step
Noise
Input Noise Voltage
Input Noise Voltage Density
E
ni
e
ni
e
ni
i
ni
—
—
—
—
7
—
—
—
—
μV
P-P
nV/
√
Hz f = 1 kHz
nV/
√
Hz f = 10 kHz
fA/
√
Hz
f = 1 kHz
f = 0.1 Hz to 10 Hz
29
21
0.6
Input Noise Current Density
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.7V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, and R
L
= 100 k
Ω
to V
L
, C
L
= 50 pF, and CS is tied low. (Refer to
Figure 1-2
and
Figure 1-3
).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
V
IL
I
CSL
V
SS
-1.0
—
0.2 V
DD
—
V
CS Input Current, Low
—
μA
CS = 0.2V
DD
CS High Specifications
CS Logic Threshold, High
V
IH
I
CSH
I
Q_SHDN
I
O_SHDN
0.8 V
DD
—
—
V
DD
2.0
V
CS Input Current, High
0.7
μA
CS = V
DD
CS = V
DD
Shutdown V
SS
current
Amplifier Output Leakage in Shutdown
-2.0
-0.7
—
μA
—
1
—
nA
Timing
CS Low to Amplifier Output Turn-on Time
t
ON
t
OFF
V
HYST
—
3.1
10
μs
CS
≤
0.2V
DD
, G = +1 V/V
CS
≥
0.8V
DD
, G = +1 V/V, No load.
V
DD
= 5.0V
CS High to Amplifier Output High-Z Time
—
100
—
ns
Hysteresis
—
0.4
—
V
CS
t
OFF
V
OUT
t
ON
Hi-Z
Hi-Z
I
DD
2 nA
(typical)
230 μA
(typical)
Output Active
I
SS
-700 nA
(typical)
-230 μA
(typical)
CS
700 nA
(typical)
2 nA
(typical)
Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCP602T-EOT | 2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP602T-EP | 2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP602T-ESL | 2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP602T-ESN | 2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP602T-EST | 2.7V to 6.0V Single Supply CMOS Op Amps |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCP602T-EOT | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP602T-EP | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP602T-ESL | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP602T-ESN | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2.7V to 6.0V Single Supply CMOS Op Amps |
| MCP602T-EST | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:2.7V to 6.0V Single Supply CMOS Op Amps |
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