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參數(shù)資料
型號: MCP6001T-I/LT
廠商: Microchip Technology
文件頁數(shù): 34/42頁
文件大?。?/td> 0K
描述: IC OPAMP 1.8V 1MHZ SINGLE SC70-5
標(biāo)準(zhǔn)包裝: 1
放大器類型: 通用
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 0.6 V/µs
增益帶寬積: 1MHz
電流 - 輸入偏壓: 1pA
電壓 - 輸入偏移: 4500µV
電流 - 電源: 100µA
電流 - 輸出 / 通道: 23mA
電壓 - 電源,單路/雙路(±): 1.8 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSSOP(5 引線),SC-88A,SOT-353
供應(yīng)商設(shè)備封裝: SC-70-5
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 678 (CN2011-ZH PDF)
配用: MCP6SX2DM-PCTLPD-ND - BOARD DAUGHTER PICTAIL MCP6SX2
其它名稱: MCP6001T-I/LTDKR
MCP6001/1R/1U/2/4
DS21733J-page 4
2009 Microchip Technology Inc.
AC ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2,
VL = VDD/2, VOUT ≈ VDD/2, RL = 10 kΩ to VL, and CL = 60 pF (refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
1.0
MHz
Phase Margin
PM
90
°
G = +1 V/V
Slew Rate
SR
0.6
V/s
Noise
Input Noise Voltage
Eni
6.1
Vp-p
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—28
nV/
√Hz f = 1 kHz
Input Noise Current Density
ini
—0.6
fA/
√Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD = +1.8V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Industrial Temperature Range
TA
-40
+85
°C
Extended Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TA
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SC70
θ
JA
331
°C/W
Thermal Resistance, 5L-SOT-23
θ
JA
256
°C/W
Thermal Resistance, 8L-PDIP
θ
JA
—85
°C/W
Thermal Resistance, 8L-SOIC (150 mil)
θ
JA
—163
°C/W
Thermal Resistance, 8L-MSOP
θ
JA
—206
°C/W
Thermal Resistance, 8L-DFN (2x3)
θ
JA
—68
°C/W
Thermal Resistance, 14L-PDIP
θ
JA
70
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
120
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
100
°C/W
Note:
The industrial temperature devices operate over this extended temperature range, but with reduced
performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute Maximum
specification of +150°C.
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