Note: Unless otherwise indicated, TA
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉(h脿o)锛� MCP4331T-503E/ML
寤犲晢锛� Microchip Technology
鏂囦欢闋�(y猫)鏁�(sh霉)锛� 29/35闋�(y猫)
鏂囦欢澶у皬锛� 0K
鎻忚堪锛� IC DGTL POT QUAD 50K 20QFN
妯�(bi膩o)婧�(zh菙n)鍖呰锛� 3,300
鎺ョ墖锛� 129
闆婚樆锛堟瓙濮嗭級锛� 50k
闆昏矾鏁�(sh霉)锛� 4
婧害绯绘暩(sh霉)锛� 妯�(bi膩o)婧�(zh菙n)鍊� 150 ppm/°C
瀛樺劜(ch菙)鍣ㄩ(l猫i)鍨嬶細 鏄撳け
鎺ュ彛锛� 4 绶� SPI锛堣姱鐗囬伕鎿囷級
闆绘簮闆诲锛� 1.8 V ~ 5.5 V
宸ヤ綔婧害锛� -40°C ~ 125°C
瀹夎椤�(l猫i)鍨嬶細 琛ㄩ潰璨艰
灏佽/澶栨锛� 20-VFQFN 瑁搁湶鐒婄洡(p谩n)
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 20-QFN 瑁搁湶鐒婄洡(p谩n)锛�4x4锛�
鍖呰锛� 甯跺嵎 (TR)
2010 Microchip Technology Inc.
DS22242A-page 35
MCP433X/435X
Note: Unless otherwise indicated, TA = +25掳C,
VDD =5V, VSS = 0V.
FIGURE 2-90:
POR/BOR Trip point vs. VDD
and Temperature.
FIGURE 2-91:
SCK Input Frequency vs.
Voltage and Temperature.
2.1
Test Circuits
FIGURE 2-92:
-3 db Gain vs. Frequency
Measurement.
FIGURE 2-93:
RBW and RW Measurement.
0
0.4
0.8
1.2
1.6
2
-40
0
40
80
120
Temperature (掳C)
V
DD
(V)
13.4
13.5
13.6
13.7
13.8
13.9
14.0
14.1
14.2
-40
0
40
80
120
Temperature (掳C)
fsck
(MHz)
2.7V
5.5V
+
-
VOUT
2.5V DC
+5V
A
B
W
Offset
GND
VIN
A
B
W
IW
VW
floating
RBW = VW / IW
VA
VB
RW = (VW - VA) / IW
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
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MCP4332-103E/ST 鍔熻兘鎻忚堪:鏁�(sh霉)瀛楅浕浣嶈▓(j矛) IC 10k SPI Qd Ch 7-Bit Volatile memory RoHS:鍚� 鍒堕€犲晢:Maxim Integrated 闆婚樆:200 Ohms 婧害绯绘暩(sh霉):35 PPM / C 瀹瑰樊:25 % POT 鏁�(sh霉)閲�:Dual 姣� POT 鍒嗘帴闋�:256 寮у埛瀛樺劜(ch菙)鍣�:Volatile 绶╂矕鍒�: 鏁�(sh霉)瀛楁帴鍙�:Serial (3-Wire, SPI) 鎻忚堪/鍔熻兘:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 宸ヤ綔闆绘簮闆诲:1.7 V to 5.5 V 闆绘簮闆绘祦:27 uA 鏈€澶у伐浣滄韩搴�:+ 125 C 瀹夎棰�(f膿ng)鏍�:SMD/SMT 灏佽 / 绠遍珨:TQFN-16 灏佽:Reel
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