參數(shù)資料
型號(hào)： MCP3901A0T-I/ML
廠商： Microchip Technology
文件頁(yè)數(shù)： 5/30頁(yè)
文件大?。?/td> 0K
描述： IC AFE 24BIT 64KSPS 20-QFN
標(biāo)準(zhǔn)包裝： 3,300
位數(shù)： 24
通道數(shù)： 2
電壓 - 電源，模擬： 4.5 V ~ 5.5 V
電壓 - 電源，數(shù)字： 2.7 V ~ 5.5 V
封裝/外殼： 20-VFQFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝： 20-QFN（4x4）
包裝： 帶卷 (TR)
PCA2002
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 25 November 2011
13 of 30
NXP Semiconductors
PCA2002
32 kHz watch circuit with programmable output period and pulse width
9.
Limiting values
[1]
When writing to the OTP cells, the supply voltage (VDD) can be raised to a maximum of 12 V for a time
period of 1 s.
[2]
Connecting the battery with reversed polarity does not destroy the circuit, but in this condition a large
current flows which rapidly discharges the battery.
[3]
Pass level; Human Body Model (HBM), according to Ref. 5 “JESD22-A114”.
[4]
Pass level; Machine Model (MM), according to Ref. 6 “JESD22-A115”.
[5]
Pass level; latch-up testing according to Ref. 7 “JESD78” at maximum ambient temperature (Tamb(max)).
[6]
According to the NXP store and transport requirements (see Ref. 9 “NX3-00092”) the devices have to be
stored at a temperature of +8
C to +45 C and a humidity of 25 % to 75 %. For long term storage products
deviant conditions are described in that document.
Table 9.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDD
supply voltage
VSS =0 V
1.8
+7.0
V
VI
input voltage
0.5
+7.5
V
tsc
short circuit duration time
output
-
indefinite
s
VESD
electrostatic discharge
voltage
HBM
-
2000
V
MM
-
200
V
Ilu
latch-up current
-100
mA
Tstg
storage temperature
30
+100
C
Tamb
ambient temperature
10
+60
C
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