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| 型號(hào)： | MCP3001-I/ST |
| 廠商： | Microchip Technology |
| 文件頁(yè)數(shù)： | 12/28頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC ADC 10BIT 2.7V 1CH SPI 8TSSOP |
| 標(biāo)準(zhǔn)包裝： | 100 |
| 位數(shù)： | 10 |
| 采樣率（每秒）： | 200k |
| 數(shù)據(jù)接口： | 串行，SPI? |
| 轉(zhuǎn)換器數(shù)目： | 1 |
| 電壓電源： | 單電源 |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類(lèi)型： | 表面貼裝 |
| 封裝/外殼： | 8-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-TSSOP |
| 包裝： | 管件 |
| 輸入數(shù)目和類(lèi)型： | 1 個(gè)偽差分，單極 |
| 產(chǎn)品目錄頁(yè)面： | 672 (CN2011-ZH PDF) |
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MCP3001
DS21293C-page 2
2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
V
DD......................................................................... 7.0V
All inputs and outputs w.r.t. V
SS ...... -0.6V to VDD +0.6V
Storage temperature ..........................-65°C to +150°C
Ambient temp. with power applied .....-65°C to +125°C
ESD protection on all pins (HBM)........................ > 4kV
*Notice: Stresses above those listed under “Maximum ratings”
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at those or
any other conditions above those indicated in the operational
listings of this specification is not implied. Exposure to maxi-
mum rating conditions for extended periods may affect device
reliability.
PIN FUNCTION TABLE
ELECTRICAL CHARACTERISTICS
Name
Function
V
DD
+2.7V to 5.5V Power Supply
V
SS
Ground
IN+
Positive Analog Input
IN-
Negative Analog Input
CLK
Serial Clock
D
OUT
Serial Data Out
CS/SHDN
Chip Select/Shutdown Input
V
REF
Reference Voltage Input
All parameters apply at V
DD = 5V, VSS = 0V, VREF = 5V, TAMB = -40°C to +85 °C, fSAMPLE = 200 ksps and fCLK = 14*fSAMPLE,
unless otherwise noted. Typical values apply for V
DD = 5V, TAMB =25 °C, unless otherwise noted.
Parameter
Sym
Min
Typ
Max
Units
Conditions
Conversion Rate:
Conversion Time
tCONV
—
10
clock
cycles
Analog Input Sample Time
tSAMPLE
1.5
clock
cycles
Throughput Rate
fSAMPLE
—
200
75
ksps
V
DD = VREF = 5V
V
DD = VREF = 2.7V
DC Accuracy:
Resolution
10
bits
Integral Nonlinearity
INL
—
±0.5
±1
LSB
Differential Nonlinearity
DNL
—
±0.25
±1
LSB
No missing codes over tem-
perature
Offset Error
—
±1.5
LSB
Gain Error
—
±1
LSB
Dynamic Performance:
Total Harmonic Distortion
THD
—
-76
—
dB
V
IN = 0.1V to 4.9V@1 kHz
Signal to Noise and Distortion
(SINAD)
SINAD
—
61
—
dB
V
IN = 0.1V to 4.9V@1 kHz
Spurious Free Dynamic Range
SFDR
—
80
—
dB
V
IN = 0.1V to 4.9V@1 kHz
Reference Input:
Voltage Range
V
REF
0.25
—
V
DD
V
Current Drain
I
REF
—90
0.001
150
3
A
CS = V
DD = 5V
Note 1: This parameter is guaranteed by characterization and not 100% tested.
2: See graph that relates linearity performance to V
REF level.
3: Because the sample cap will eventually lose charge, clock rates below 10 kHz can affect linearity perfor-
mance, especially at elevated temperatures.
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